We have developed a 756 nm, 3 W single-frequency cw Ti:sapphire laser by using the technique of injection locking. A cw Ti:sapphire laser in a ring-type configuration was forced to lase unidirectionally by use of an optical diode to prevent a high-power backward laser from disturbing the injection laser. A master laser was amplified by a broad-area laser diode and coupled into a single-mode fiber to generate a 50 mW injection laser with a Gaussian beam profile, which was enough to lock the Ti:sapphire laser at full power of 3 W. Such a high-power single-frequency Ti:sapphire laser enables a watt-level blue or near-ultraviolet single-frequency laser to be generated by frequency doubling.
© 2005 Optical Society of America
(140.3520) Lasers and laser optics : Lasers, injection-locked
(140.3560) Lasers and laser optics : Lasers, ring
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.3590) Lasers and laser optics : Lasers, titanium
Lasers and Laser Optics
Yong Ho Cha, Yong Woo Lee, Kwang-Hoon Ko, Euo Chang Jung, Gwon Lim, Jaewoo Kim, Taek-Soo Kim, and Do-Young Jeong, "Development of a 756 nm, 3 W injection-locked cw Ti:sapphire laser," Appl. Opt. 44, 7810-7813 (2005)