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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 45, Iss. 15 — May. 20, 2006
  • pp: 3510–3515

Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials

Jean-Yee Wu and Cheng-Chung Lee  »View Author Affiliations

Applied Optics, Vol. 45, Issue 15, pp. 3510-3515 (2006)

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Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide ( SiO 2 ) films. The SiO 2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman–Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO 2 films show excellent optical properties with extra-low extinction coefficients (below 2 × 10 5 ) and have no water absorption. When the working gas is O 2 for the ion-assisted source, the deposited SiO 2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO 2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

© 2006 Optical Society of America

OCIS Codes
(310.6860) Thin films : Thin films, optical properties
(310.6870) Thin films : Thin films, other properties

ToC Category:
Thin Films

Original Manuscript: September 30, 2005
Manuscript Accepted: November 30, 2005

Jean-Yee Wu and Cheng-Chung Lee, "Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials," Appl. Opt. 45, 3510-3515 (2006)

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