OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 45, Iss. 24 — Aug. 20, 2006
  • pp: 6086–6093

Measurement technique for in situ characterizing aberrations of projection optics in lithographic tools

Fan Wang, Xiangzhao Wang, and Mingying Ma  »View Author Affiliations


Applied Optics, Vol. 45, Issue 24, pp. 6086-6093 (2006)
http://dx.doi.org/10.1364/AO.45.006086


View Full Text Article

Enhanced HTML    Acrobat PDF (662 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

As the feature size decreases, degradation of image quality caused by wavefront aberrations of projection optics in lithographic tools has become a serious problem in the low-k1 process. We propose a novel measurement technique for in situ characterizing aberrations of projection optics in lithographic tools. Considering the impact of the partial coherence illumination, we introduce a novel algorithm that accurately describes the pattern displacement and focus shift induced by aberrations. Employing the algorithm, the measurement condition is extended from three-beam interference to two-, three-, and hybrid-beam interferences. The experiments are performed to measure the aberrations of projection optics in an ArF scanner.

© 2006 Optical Society of America

OCIS Codes
(110.3000) Imaging systems : Image quality assessment
(110.5220) Imaging systems : Photolithography
(120.3940) Instrumentation, measurement, and metrology : Metrology
(220.4840) Optical design and fabrication : Testing

History
Original Manuscript: December 14, 2005
Revised Manuscript: March 10, 2006
Manuscript Accepted: March 14, 2006

Citation
Fan Wang, Xiangzhao Wang, and Mingying Ma, "Measurement technique for in situ characterizing aberrations of projection optics in lithographic tools," Appl. Opt. 45, 6086-6093 (2006)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-45-24-6086


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. A. Hand, "Mix-and-match lithography tackles tighter requirements," Semicond. Int. 25(2), 46-51 (2003).
  2. T. Brunner, "Impact of lens aberrations on optical lithography," IBM J. Res. Dev. 41, 57-67 (1997). [CrossRef]
  3. P. Graeupner, R. B. Garreis, A. Goehnermeier, T. Heil, M. Lowisch, and D. G. Flagello, "Impact of wavefront errors on low k1 processes at extremely high NA," in Optical Microlithography XVI, A. Yen, ed., Proc. SPIE 5040, 119-130 (2003). [CrossRef]
  4. K. Lai, G. M. Gallatin, and M. A. van de Kerkhof, "New paradigm in lens metrology for lithographic scanner: evaluation and exploration," in Optical Microlithography XVII, B. W. Smith, ed., Proc. SPIE 5377, 160-171 (2004). [CrossRef]
  5. Y. Chiba and K. Takahashi, "New-generation projection optics for ArF lithography," in Optical Microlithography XV, A. Yen, ed., Proc. SPIE 4691, 679-686 (2002). [CrossRef]
  6. B. W. Smith, W. Conley, and C. M. Garza, "Aberration determination in early 157-nm exposure system," in Optical Microlithography XV, A. Yen, ed., Proc. SPIE 4691, 1635-1643 (2002). [CrossRef]
  7. H. Nomura and T. Sato, "Techniques for measuring aberrations in lenses used in photolithography with printed patterns," Appl. Opt. 38, 2800-2807 (1999). [CrossRef]
  8. H. Nomura, K. Tawarayama, and T. Kohno, "Aberration measurement from specific photolithographic images: a different approach," Appl. Opt. 39, 1136-1147 (2000). [CrossRef]
  9. M. Born and E. Wolf, Principles of Optics, (Cambridge U. Press, 1999).
  10. T. E. Adams, "Application of latent image metrology in microlithography," in Integrated Circuit Metrology, Inspection, and Process Control V, W. H. Arnold, ed., Proc. SPIE 1464, 294-312 (1991). [CrossRef]
  11. P. Dirksen, W. de Laat, and H. Megens, "Latent image metrology for production wafer steppers," in Optical/Laser Microlithography VIII, T. A. Brunner, ed., Proc. SPIE 2440, 701-711 (1995). [CrossRef]
  12. E. L. Raab, C. Pierrat, C. H. Fields, R. L. Kostelak, W. G. Oldham, and S. Vaidya, "Analyzing deep-uv lens aberrations using aerial image and latent image metrologies," in Optical/Laser Microlithography VII, T. A. Brunner, ed., Proc. SPIE 2197, 550-565 (1994). [CrossRef]
  13. B. Vleeming, B. Heskamp, and H. Bakker, "ArF Step and Scan system with 0.75 NA for the 0.10 μm node," in Optical Microlithography XIV, C. J. Progler, ed., Proc. SPIE 4346, 634-650 (2001). [CrossRef]
  14. H. D. Betz, "An asymmetry method for high precision alignment with laser light," Appl. Opt. 8, 1007-1013 (1969). [CrossRef] [PubMed]
  15. M. Gruber, D. Hagedorn, and W. Eckery, "Precise and simple optical alignment method for double-sided lithography," Appl. Opt. 40, 5052-5055 (2001). [CrossRef]
  16. W. Shi, X. Wang, D. Zhang, and O. Sasaki, "A method for measuring the lateral aberrations of a lithographic projection system with mirror-symmetry FOCAL marks," Opt. Eng. 45, 053201 (2006). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited