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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 45, Iss. 27 — Sep. 20, 2006
  • pp: 7043–7055

State estimation approach for determining composition and growth rate of Si1− x Ge x chemical vapor deposition utilizing real-time ellipsometric measurements

Scott A. Middlebrooks and James B. Rawlings  »View Author Affiliations


Applied Optics, Vol. 45, Issue 27, pp. 7043-7055 (2006)
http://dx.doi.org/10.1364/AO.45.007043


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Abstract

We present an algorithm that simultaneously deduces from real-time ellipsometric measurements both the growth rate and the composition of Si 1 - x Ge x films deposited via chemical vapor deposition. The heart of the algorithm is a dynamic, first-principles model of the deposition system and the ellipsometric sensor. The model predicts the ellipsometric parameters Ψ and Δ during film growth. An extended Kalman filter is developed that utilizes the sensor model and infers both the growth rate and the Ge composition of the deposited film in real time. Two simulations demonstrating the effectiveness of the algorithm are evaluated.

© 2006 Optical Society of America

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(310.1860) Thin films : Deposition and fabrication

History
Original Manuscript: October 26, 2005
Revised Manuscript: April 4, 2006
Manuscript Accepted: May 12, 2006

Citation
Scott A. Middlebrooks and James B. Rawlings, "State estimation approach for determining composition and growth rate of Si1-xGex chemical vapor deposition utilizing real-time ellipsometric measurements," Appl. Opt. 45, 7043-7055 (2006)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-45-27-7043

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