State estimation approach for determining composition and growth rate of Si1-xGex chemical vapor deposition utilizing real-time ellipsometric measurements
Applied Optics, Vol. 45, Issue 27, pp. 7043-7055 (2006)
http://dx.doi.org/10.1364/AO.45.007043
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Abstract
We present an algorithm that simultaneously deduces from real-time
ellipsometric measurements both the growth rate and the composition of
© 2006 Optical Society of America
OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(310.1860) Thin films : Deposition and fabrication
History
Original Manuscript: October 26, 2005
Revised Manuscript: April 4, 2006
Manuscript Accepted: May 12, 2006
Citation
Scott A. Middlebrooks and James B. Rawlings, "State estimation approach for determining composition and growth rate of Si1-xGex chemical vapor
deposition utilizing real-time ellipsometric measurements," Appl. Opt. 45, 7043-7055 (2006)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-45-27-7043
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