Influence of interband transitions on electron-phonon coupling measurements in Ni films
Applied Optics, Vol. 46, Issue 11, pp. 2076-2083 (2007)
http://dx.doi.org/10.1364/AO.46.002076
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Abstract
The reduction in size and the increase in speed of opto- and magnetoelectronic devices is making the probability of nonequilibrium electron–phonon phenomena greater, leading to increased thermal resistance in these devices. The measurement of electron–phonon coupling in materials in these devices is becoming increasingly important for accurate thermal management. Here femtosecond thermoreflectance is used to measure the electron–phonon coupling factor in thin Ni films of varying thickness grown on Si and glass substrates. The thermoreflectance response is measured at 1.3 and
© 2007 Optical Society of America
OCIS Codes
(120.5700) Instrumentation, measurement, and metrology : Reflection
(160.3380) Materials : Laser materials
(240.0310) Optics at surfaces : Thin films
(260.2160) Physical optics : Energy transfer
(260.3060) Physical optics : Infrared
(310.6860) Thin films : Thin films, optical properties
ToC Category:
Thin Films
History
Original Manuscript: September 6, 2006
Revised Manuscript: November 10, 2006
Manuscript Accepted: November 16, 2006
Published: March 20, 2007
Citation
Patrick E. Hopkins, J. Michael Klopf, and Pamela M. Norris, "Influence of interband transitions on electron-phonon coupling measurements in Ni films," Appl. Opt. 46, 2076-2083 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-11-2076
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