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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 23 — Aug. 10, 2007
  • pp: 5709–5718

Optical and electrical properties between 0.4 and 12 μm for Sn-doped In2O3 films by pulsed laser deposition and cathode sputtering

Daniel Dubreuil, Jean-Pierre Ganne, Gérard Berginc, and Frédéric Terracher  »View Author Affiliations

Applied Optics, Vol. 46, Issue 23, pp. 5709-5718 (2007)

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Optical properties of Sn-doped In 2 O 3 (ITO) have been studied in the optical range of 0.4 12 μ m . A deposition has been made on BK7 glass, magnesium fluoride, sapphire, and zinc sulfide substrates. The layers have been characterized by their optical properties, DC electrical sheet resistivity, and Hall mobility. Sheet resistivity lies in the range of 6.8 318 Ω / s q for thicknesses between 16 and 280   nm . The best carrier mobility is obtained on BK7 and sapphire substrates, up to 50 cm 2 / V   s . The material shows good infrared transparency in the 3 5 μ m range on magnesium fluoride and 0.4 4 μ m on sapphire, and it is usable for practical applications up to 1 2 μ m on zinc sulfide. Simulations have been carried out for optical indices and spectra calculations. The Drude model has been used to exploit the results in either direction: from electrical measured data to the simulation of optical spectra and indices, and from measured optical spectra to simulated optical indices and electrical parameters (mobility, carrier density). Hall mobility is considered a worthy and convenient material quality criteria for materials aimed at optics.

© 2007 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(260.3060) Physical optics : Infrared
(260.3090) Physical optics : Infrared, far
(310.6860) Thin films : Thin films, optical properties
(310.6870) Thin films : Thin films, other properties

ToC Category:
Thin Films

Original Manuscript: April 4, 2007
Manuscript Accepted: May 22, 2007
Published: August 8, 2007

Daniel Dubreuil, Jean-Pierre Ganne, Gérard Berginc, and Frédéric Terracher, "Optical and electrical properties between 0.4 and 12 μm for Sn-doped In2O3 films by pulsed laser deposition and cathode sputtering," Appl. Opt. 46, 5709-5718 (2007)

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