Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes
Applied Optics, Vol. 46, Issue 23, pp. 5974-5978 (2007)
http://dx.doi.org/10.1364/AO.46.005974
Enhanced HTML 
Acrobat PDF (207 KB)
Abstract
A metal layer formed on the backside of InGaN∕sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere∕air interface.
© 2007 Optical Society of America
OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
ToC Category:
Optical Devices
History
Original Manuscript: April 10, 2007
Manuscript Accepted: May 30, 2007
Published: August 9, 2007
Citation
Hisashi Masui, Natalie N. Fellows, Hitoshi Sato, Hirokuni Asamizu, Shuji Nakamura, and Steven P. DenBaars, "Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes," Appl. Opt. 46, 5974-5978 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-23-5974
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
Related Journal Articles 
- Origin of power fluctuations in GaN resonant-cavity light-emitting diodes (OE)
- Analysis of position-dependent light extraction of GaN-based LEDs (OE)
- Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes (OE)
- Point defect engineered Si sub-bandgap light-emitting diode (OE)
- An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K (OE)
Related Conference Papers
- Semiconductor quantum computer design with 100 nm separation of nuclear-spin qubits
- Semiconductor quantum computer design with 100 nm separation of nuclear-spin qubits
- Innovations in Solid-State Lighting
- 1.3 µm Quantum Dot Multi-Section Superluminescent Diode with Extremely Broad Bandwidth (> 150 nm)
- Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes
- Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes
« Previous Article | Next Article »
OSA is a member of 