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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 25 — Sep. 1, 2007
  • pp: 6273–6276

Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Y. P. Huang, H. C. Liang, J. Y. Huang, K. W. Su, A. Li, Y. F. Chen, and K. F. Huang  »View Author Affiliations

Applied Optics, Vol. 46, Issue 25, pp. 6273-6276 (2007)

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InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946   nm . With an incident pump power of 9.2 W, the laser produces pulses of 38   ns duration with average pulse energy of as much as 20   μJ at a pulse repetition rate of 55   kHz .

© 2007 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

Original Manuscript: April 2, 2007
Revised Manuscript: June 8, 2007
Manuscript Accepted: June 12, 2007
Published: August 23, 2007

Y. P. Huang, H. C. Liang, J. Y. Huang, K. W. Su, A. Li, Y. F. Chen, and K. F. Huang, "Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser," Appl. Opt. 46, 6273-6276 (2007)

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  1. W. Koechner, Solid-State Laser Engineering, 5th ed., Vol. 1 of Optical Sciences (Springer, 1999).
  2. Y. Kaneda, M. Oka, H. Masuda, and S. Kubota, "7.6 W of continuous-wave radiation in a TEM00 mode from a laser-diode end-pumped Nd:YAG laser," Opt. Lett. 17, 1003-1005 (1992). [CrossRef] [PubMed]
  3. T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997). [CrossRef]
  4. T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987). [CrossRef]
  5. T. Y. Fan, "Optimizing the efficiency and stored energy in quasi-three-level lasers," IEEE J. Quantum Electron. 28, 2692-2697 (1992). [CrossRef]
  6. T. Kellner, F. Heine, G. Huber, and S. Kuck, "Passive Q-switching of a diode-pumped 946-nm Nd:YAG with 1.6-W average output power," Appl. Opt. 37, 7076-7079 (1998). [CrossRef]
  7. L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005). [CrossRef]
  8. S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006). [CrossRef]
  9. S. Spiekermann, H. Karlsson, and F. Laurell, "Efficient frequency conversion of a passively Q-switched Nd:YAG laser at 946 nm in periodically poled KTiOPO4," Appl. Opt. 40, 1979-1982 (2001). [CrossRef]
  10. X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004). [CrossRef]
  11. S. Johansson, S. Bjurshagen, C. Canalias, V. Pasiskevicius, and F. Laurell, "An all solid-state UV source based on a frequency quadrupled, passively Q-switched 946 nm laser," Opt. Express 15, 449-458 (2007). [CrossRef] [PubMed]
  12. G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, "Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers," J. Opt. Soc. Am. B 16, 376-388 (1999). [CrossRef]
  13. J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y. F. Chen, and K. F. Huang, "InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Opt. 46, 239-242 (2007). [CrossRef] [PubMed]
  14. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001). [CrossRef]
  15. S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002). [CrossRef]
  16. T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001). [CrossRef]
  17. M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001). [CrossRef]
  18. G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001). [CrossRef]

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