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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 46, Iss. 25 — Sep. 1, 2007
  • pp: 6273–6276

Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Y. P. Huang, H. C. Liang, J. Y. Huang, K. W. Su, A. Li, Y. F. Chen, and K. F. Huang  »View Author Affiliations


Applied Optics, Vol. 46, Issue 25, pp. 6273-6276 (2007)
http://dx.doi.org/10.1364/AO.46.006273


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Abstract

InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946   nm . With an incident pump power of 9.2 W, the laser produces pulses of 38   ns duration with average pulse energy of as much as 20   μJ at a pulse repetition rate of 55   kHz .

© 2007 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 2, 2007
Revised Manuscript: June 8, 2007
Manuscript Accepted: June 12, 2007
Published: August 23, 2007

Citation
Y. P. Huang, H. C. Liang, J. Y. Huang, K. W. Su, A. Li, Y. F. Chen, and K. F. Huang, "Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser," Appl. Opt. 46, 6273-6276 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-25-6273


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References

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