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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 25 — Sep. 1, 2007
  • pp: 6309–6313

Imaging reflectometry in situ

Michal Urbánek, Jiří Spousta, Tomáš Běhounek, and Tomáš Šikola  »View Author Affiliations

Applied Optics, Vol. 46, Issue 25, pp. 6309-6313 (2007)

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An innovative method of in situ real-time optical monitoring of thin film deposition and etching is presented. In this technique, intensity maps of a thin film corresponding to a series of wavelengths selected by a monochromator ( 300 800   nm ) are recorded by a CCD camera. From the maps the reflectance spectra at individual points of the sample surface can be extracted. By fitting the reflectance spectra to the theoretical ones, the maps of a thin film morphology (including optical parameters) and their temporal development during technological processes can be obtained. The method was tested by in situ observation of the growth of silicon nitride and silicon oxide thin films prepared by ion beam sputtering and by the monitoring of etching of thermally grown SiO 2 thin films.

© 2007 Optical Society of America

OCIS Codes
(110.6880) Imaging systems : Three-dimensional image acquisition
(120.5700) Instrumentation, measurement, and metrology : Reflection
(240.0310) Optics at surfaces : Thin films
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Original Manuscript: May 21, 2007
Manuscript Accepted: July 13, 2007
Published: August 23, 2007

Michal Urbánek, Jiří Spousta, Tomáš Běhounek, and Tomáš Šikola, "Imaging reflectometry in situ," Appl. Opt. 46, 6309-6313 (2007)

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