We compared two reflection-mode negative electron affinity (NEA) GaAs photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. One sample is uniform doping, and another is gradient doping.
Experimental curves of spectral response sensitivity and quantum efficiency are obtained.
The thicknesses of the two cathodes are both
© 2007 Optical Society of America
(250.0250) Optoelectronics : Optoelectronics
Original Manuscript: April 23, 2007
Revised Manuscript: June 21, 2007
Manuscript Accepted: June 21, 2007
Published: September 27, 2007
Zhi Yang, Benkang Chang, Jijun Zou, Jianliang Qiao, Pin Gao, Yiping Zeng, and Hui Li, "Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode," Appl. Opt. 46, 7035-7039 (2007)