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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 46, Iss. 29 — Oct. 10, 2007
  • pp: 7337–7344

Spectral reflectance and responsivity of Ge- and InGaAs-photodiodes in the near-infrared: measurement and model

M. López, H. Hofer, K. D. Stock, J. C. Bermúdez, A. Schirmacher, F. Schneck, and S. Kück  »View Author Affiliations


Applied Optics, Vol. 46, Issue 29, pp. 7337-7344 (2007)
http://dx.doi.org/10.1364/AO.46.007337


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Abstract

The spectral reflectance and responsivity of Ge- and InGaAs-photodiodes at (nearly) normal and oblique incidence (45°) were investigated. The derived data allow a calculation of the photodiodes responsivities for any incident angle. The measurements were carried out with s- and p-polarized radiation in the wavelength range from 1260 to 1640   nm . The spectral reflectance of the photodiodes was modeled by using the matrix approach developed for thin-film optical assemblies. The comparison between the calculated and measured reflectance shows a difference of less than 2% for the Ge-photodiode. For the InGaAs-photodiode, the differences between measured and calculated reflectance are larger, i.e., up to 6% for wavelengths between 1380 and 1580   nm . Despite the larger differences between calculated and measured spectral reflectances for the InGaAs-photodiode, the difference between calculated and measured spectral responsivity is even smaller for the InGaAs-photodiode than for the Ge-photodiode, i.e., 1.2% for the InGaAs-photodiode compared to 2.2% for the Ge-photodiode. This is because the difference in responsivity is strongly correlated to the absolute spectral reflectance level, which is much lower for the InGaAs-photodiode. This observation also shows the importance of having small reflectances, i.e., appropriate antireflection coatings for the photodiodes. The relative standard uncertainty associated with the modeled spectral responsivity is about 2.2% for the Ge-photodiode and about 1.2% for the InGaAs-photodiode for any incident angle over the whole spectral range measured. The data obtained for the photodiodes allow the calculation of the spectral responsivity of Ge- and InGaAs-trap detectors and the comparison with experimental results.

© 2007 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(120.0120) Instrumentation, measurement, and metrology : Instrumentation, measurement, and metrology

ToC Category:
Detectors

History
Original Manuscript: June 8, 2007
Manuscript Accepted: July 31, 2007
Published: October 9, 2007

Citation
M. López, H. Hofer, K. D. Stock, J. C. Bermúdez, A. Schirmacher, F. Schneck, and S. Kück, "Spectral reflectance and responsivity of Ge- and InGaAs-photodiodes in the near-infrared: measurement and model," Appl. Opt. 46, 7337-7344 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-29-7337


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