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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 46, Iss. 5 — Feb. 10, 2007
  • pp: 785–788

Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 μm

Yoshimasa Toyoda, Luis R. Elias, and William M. Yen  »View Author Affiliations

Applied Optics, Vol. 46, Issue 5, pp. 785-788 (2007)

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We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and 532   nm wavelength light from a Nd:YAG laser with a 130 ps pulse width were used to generate free carriers in the samples. Reflectance and transmittance were measured at a 10.6 μ m wavelength using a linearly polarized CO 2 laser.

© 2007 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.5140) Materials : Photoconductive materials
(160.6000) Materials : Semiconductor materials
(260.5150) Physical optics : Photoconductivity
(260.5210) Physical optics : Photoionization
(300.6500) Spectroscopy : Spectroscopy, time-resolved

ToC Category:

Original Manuscript: July 10, 2006
Manuscript Accepted: August 18, 2006
Published: January 25, 2007

Yoshimasa Toyoda, Luis R. Elias, and William M. Yen, "Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 μm," Appl. Opt. 46, 785-788 (2007)

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