Comparative study of terahertz radiation from n-InAs and n-GaAs
Applied Optics, Vol. 46, Issue 5, pp. 789-794 (2007)
http://dx.doi.org/10.1364/AO.46.000789
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Abstract
We have studied terahertz (THz) emissions from n-InAs and n-GaAs using an ensemble Monte Carlo method. Our simulations indicate that higher amplitude THz waves from n-InAs, compared with those from n-GaAs, result from the difference in the radiation mechanisms between these two samples and are not completely dependent on the most commonly recognized fact: lighter electron effective mass in n-InAs. The excitation-wavelength-dependent and doping-level-dependent THz emissions from n-InAs are found to be quite different from those from n-GaAs. The corresponding mechanisms are analyzed by the introduction of a weighted electric field, which is weighted by the photogenerated carrier density in a semiconductor. The simulated results are in good qualitative agreement with experimental observations from other authors.
© 2007 Optical Society of America
OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(260.2110) Physical optics : Electromagnetic optics
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(320.7090) Ultrafast optics : Ultrafast lasers
ToC Category:
Ultrafast Optics
History
Original Manuscript: July 10, 2006
Manuscript Accepted: September 18, 2006
Published: January 25, 2007
Citation
Dong-Feng Liu and Du Xu, "Comparative study of terahertz radiation from n-InAs and n-GaAs," Appl. Opt. 46, 789-794 (2007)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-46-5-789
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