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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 47, Iss. 10 — Apr. 1, 2008
  • pp: 1453–1456

GaN membrane metal–semiconductor–metal ultraviolet photodetector

A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Kostopoulos, M. Androulidaki, M. Kayambaki, and D. Vasilache  »View Author Affiliations

Applied Optics, Vol. 47, Issue 10, pp. 1453-1456 (2008)

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GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal–semiconductor–metal-type photodetector structure was designed and manufactured on a 2.2 μm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current ( 30 pA at 3 V ) and a maximum responsivity of 14 mA / W at a wavelength of 370 nm were obtained.

© 2008 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.7190) Detectors : Ultraviolet

ToC Category:

Original Manuscript: October 18, 2007
Revised Manuscript: January 18, 2008
Published: March 27, 2008

A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Kostopoulos, M. Androulidaki, M. Kayambaki, and D. Vasilache, "GaN membrane metal-semiconductor-metal ultraviolet photodetector," Appl. Opt. 47, 1453-1456 (2008)

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  1. E. Monroy, F. Omnes, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18, R33-R51 (2003), [CrossRef]
  2. E. Monroy, F. Calle, F. Munoz, and F. Omnes, “AlGaN metal-semiconductor-metal photodiodes,” Appl. Phys. Lett. 74, 3401-3403 (1999). [CrossRef]
  3. J. C. Carrano, T. Li, P. A. Grudovsky, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, “Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN,” J. Appl. Phys. 83, 6148-6160(1998) [CrossRef]
  4. T. Palacios, E. Monroy, F. Calle, and F. Omnes, “High-responsivity submicron metal-semiconductor-metal ultraviolet detectors,” Appl. Phys. Lett. 81, 1902-1904 (2002). [CrossRef]
  5. T. Palacios, F. Calle, E. Monroy, and F. Munoz, “Submicron technology for III-nitride semiconductors,” J. Vac. Sci. Technol. B 20, 2071-2074 (2002). [CrossRef]
  6. R. W. Chuang, S. P. Chuang, and S. J. Chuang, “Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates,” J. Appl. Phys. 102, 073110 (2007) [CrossRef]
  7. A. Krost, A. Dadgar, G. Strassburger, and R. Clos, “GaN-based epitaxy on silicon: stress measurements,” Phys. Status Solidi A 200, 26-35 (2003). [CrossRef]
  8. A. Müller, D. Neculoiu, D. Vasilache, D. Dascalu, G. Konstantinidis, A. Kosopoulos, A. Adikimenakis, A. Georgakilas, K. Mutamba, C. Sydlo, H. L. Hartnagel, and A. Dadgar, “GaN micromachined FBAR structures for microwave applications,” Superlattices Microstruct. 40, 426-431(2006). [CrossRef]
  9. S. K. Zhang, W. B. Wang, I. Shatu, F. Yun, L. He, H. Markoç, X. Zhou, M. Tamargo, and R. R. Aifano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81, 4862-4864 (2002). [CrossRef]

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