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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 47, Iss. 10 — Apr. 1, 2008
  • pp: 1628–1631

Laterally graded porous silicon optical filter fabricated by diffusion-limited etch process

Kyungwook Hwang, Sihan Kim, Yeonsang Park, Heonsu Jeon, and Jaewook Jeong  »View Author Affiliations

Applied Optics, Vol. 47, Issue 10, pp. 1628-1631 (2008)

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We report a method of producing a lateral gradient in the optical properties of anodically etched porous silicon layers. Lateral gradation details of the porous silicon layer are governed by the etch mask pattern involved. Unlike other methods that rely on uneven hole current distribution, we believe that in our method the diffusion of reactive ions in the etchant plays a key role. As an implementation of the proposed method, we demonstrate a linearly graded optical bandpass filter operating at the λ = 1550 nm range by employing a tapered etch window opening. The resultant optical filter exhibited a 60 nm tuning range with a sharp transmission bandwidth of 3 nm . Computer simulations indicate that an uneven hole current distribution cannot be the reason for the observed gradient along the taper axis, supporting the view that the diffusion-limited etch process plays the key role.

© 2008 Optical Society of America

OCIS Codes
(230.4170) Optical devices : Multilayers
(260.3160) Physical optics : Interference
(310.3840) Thin films : Materials and process characterization

ToC Category:
Optical Devices

Original Manuscript: November 27, 2007
Revised Manuscript: February 15, 2008
Manuscript Accepted: February 20, 2008
Published: March 31, 2008

Kyungwook Hwang, Sihan Kim, Yeonsang Park, Heonsu Jeon, and Jaewook Jeong, "Laterally graded porous silicon optical filter fabricated by diffusion-limited etch process," Appl. Opt. 47, 1628-1631 (2008)

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