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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: James C. Wyant
  • Vol. 47, Iss. 10 — Apr. 1, 2008
  • pp: 1628–1631

Laterally graded porous silicon optical filter fabricated by diffusion-limited etch process

Kyungwook Hwang, Sihan Kim, Yeonsang Park, Heonsu Jeon, and Jaewook Jeong  »View Author Affiliations


Applied Optics, Vol. 47, Issue 10, pp. 1628-1631 (2008)
http://dx.doi.org/10.1364/AO.47.001628


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Abstract

We report a method of producing a lateral gradient in the optical properties of anodically etched porous silicon layers. Lateral gradation details of the porous silicon layer are governed by the etch mask pattern involved. Unlike other methods that rely on uneven hole current distribution, we believe that in our method the diffusion of reactive ions in the etchant plays a key role. As an implementation of the proposed method, we demonstrate a linearly graded optical bandpass filter operating at the λ = 1550 nm range by employing a tapered etch window opening. The resultant optical filter exhibited a 60 nm tuning range with a sharp transmission bandwidth of 3 nm . Computer simulations indicate that an uneven hole current distribution cannot be the reason for the observed gradient along the taper axis, supporting the view that the diffusion-limited etch process plays the key role.

© 2008 Optical Society of America

OCIS Codes
(230.4170) Optical devices : Multilayers
(260.3160) Physical optics : Interference
(310.3840) Thin films : Materials and process characterization

ToC Category:
Optical Devices

History
Original Manuscript: November 27, 2007
Revised Manuscript: February 15, 2008
Manuscript Accepted: February 20, 2008
Published: March 31, 2008

Citation
Kyungwook Hwang, Sihan Kim, Yeonsang Park, Heonsu Jeon, and Jaewook Jeong, "Laterally graded porous silicon optical filter fabricated by diffusion-limited etch process," Appl. Opt. 47, 1628-1631 (2008)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-47-10-1628


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References

  1. L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57, 1046-1048 (1990). [CrossRef]
  2. C. Mazzoleni and L. Pavesi, “Application to optical components of dielectric porous silicon multilayers,” Appl. Phys. Lett. . 67, 2983-2985 (1995). [CrossRef]
  3. L. Pavesi and P. Dubos, “Random porous silicon multilayers: application to distributed Bragg reflectors and interferential Fabry-Pérot filters,” Semicond. Sci. Technol. 12, 570-575(1997). [CrossRef]
  4. P. Ferrand and R. Romestain, “Optical losses in porous silicon waveguides in the near-infrared: effects of scattering,” Appl. Phys. Lett. 77, 3535-3537 (2000). [CrossRef]
  5. D. A. G. Bruggemann, “The calculation of various physical constants of heterogeneous substances. I. The dielectric constants and conductivities of mixtures composed of isotropic substances,” Ann. Phys. 24, 636-664 (1935).
  6. D. Hunkel, R. Butz, R. Ares-Fisher, M. Marso, and H. Lüth, “Interference filters from porous silicon with laterally varying wavelength of reflection,” J. Lumin. 80, 133-136 (1998). [CrossRef]
  7. D. Hunkel, M. Marso, R. Butz, R. Arens-Fischer, and H. Lüth, “Integrated photometer with porous silicon interference filters,” Mater. Sci. Eng. B 69, 100-103 (2000). [CrossRef]
  8. S. E. Foss and T. G. Finstad, in Engineered Pososity for Microphotonics and Plasmonics, R. Wehrspohn, F. Garcial-Vidal, M. Notomi, and A. Scherer, eds., MRS Proceedings 707 (Materials Research Society, 2004), paper W.1.6.
  9. H. H. G. Bohn and M. Marso, “Wedge-shaped layers from porous silicon: the basics of laterally graded interference filters,” Phys. Status Solidi A 202, 1437-1442 (2005). [CrossRef]
  10. J.-C. Lin, P.-W. Lee, and W.-C. Tsai, “Manufacturing method for n-type porous silicon based on Hall effect without illumination,” Appl. Phys. Lett. 89, 121119 (2006). [CrossRef]
  11. S. Llyas and M. Gal, “Gradient refractive index planar microlens in Si using porous silicon,” Appl. Phys. Lett. 89, 211123 (2006). [CrossRef]
  12. M. Ghulinyan, Z. Gaburro, and L. Pavesi, in “Optical superlattices: where photons behave like electrons,” New Topics in Lasers and Electro-Optics, W. T. Arkin, ed. (Nova Science, 2006), Chap. 2, pp. 63-82.
  13. H.-J. Kim, J. H. Kim, and H. Jeon, “Optical microscope imaging of semiconductor quantum wells,” Semicond. Sci. Technol. 16, L24-L27 (2001). [CrossRef]
  14. Y.-S. Kim, J. Kim, J.-S. Choe, Y.-G. Roh, H. Jeon, and J. C. Woo, “Semiconductor microlenses fabricated by one-step wet etching,” IEEE Photon. Technol. Lett. 12, 507-509 (2000). [CrossRef]
  15. A. Halimaoui, “Pourous silicon formation by anodisation,” in Properties of Porous Silicon, L.T.Canham, ed. (Institution of Engineering and Technology, 1997), Sec. 1.2, pp.12-22.
  16. Y. Park, J.-S. Choe, and H. Jeon, “Design, fabrication, and micro-reflectance measurement of a GaAs/AlAs-oxide antireflection film,” J. Korean Phys. Soc. 40, 245-249 (2002).

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