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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 47, Iss. 13 — May. 1, 2008
  • pp: C271–C274

Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films

Tero Pilvi, Mikko Ritala, Markku Leskelä, Martin Bischoff, Ute Kaiser, and Norbert Kaiser  »View Author Affiliations

Applied Optics, Vol. 47, Issue 13, pp. C271-C274 (2008)

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A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225   ° C 400   ° C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350   ° C 400   ° C with good stoichiometry. Refractive indices of 1.34–1.42 for M g F 2 , 1.43 for C a F 2 , and 1.57–1.61 for L a F 3 films are obtained.

© 2008 Optical Society of America

OCIS Codes
(310.0310) Thin films : Thin films
(310.1860) Thin films : Deposition and fabrication

Original Manuscript: August 7, 2007
Manuscript Accepted: October 5, 2007
Published: February 14, 2008

Tero Pilvi, Mikko Ritala, Markku Leskelä, Martin Bischoff, Ute Kaiser, and Norbert Kaiser, "Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films," Appl. Opt. 47, C271-C274 (2008)

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