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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 47, Iss. 2 — Jan. 10, 2008
  • pp: 164–168

Temperature-dependent refractive index measurements of wafer-shaped InAs and InSb

Glen D. Gillen, Chris DiRocco, Peter Powers, and Shekhar Guha  »View Author Affiliations

Applied Optics, Vol. 47, Issue 2, pp. 164-168 (2008)

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An experimental method is introduced to measure the refractive index and its temperature dependence for wafer-shaped infrared materials over a continuous temperature range. Using a combination of Michelson interferometry, Fabry–Perot interferometry, and a temperature-controlled cryostat in a laser micrometer, refractive index values and their temperature coefficients can be measured for any specific temperature within a desired temperature range. Measurements arereported for InAs and InSb for a laser wavelength of 10.59 μ m .

© 2008 Optical Society of America

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: August 14, 2007
Manuscript Accepted: November 16, 2007
Published: January 7, 2008

Glen D. Gillen, Chris DiRocco, Peter Powers, and Shekhar Guha, "Temperature-dependent refractive index measurements of wafer-shaped InAs and InSb," Appl. Opt. 47, 164-168 (2008)

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