Temperature-dependent refractive index measurements of wafer-shaped InAs and InSb
Applied Optics, Vol. 47, Issue 2, pp. 164-168 (2008)
http://dx.doi.org/10.1364/AO.47.000164
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Abstract
An experimental method is introduced to measure the refractive index and its temperature dependence for wafer-shaped infrared materials over a continuous temperature range.
Using a combination of Michelson interferometry, Fabry–Perot interferometry, and a temperature-controlled cryostat in a laser micrometer, refractive index values and their temperature coefficients can be measured for any specific temperature within a desired temperature range. Measurements arereported for InAs and InSb for a laser wavelength of
© 2008 Optical Society of America
OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
ToC Category:
Instrumentation, Measurement, and Metrology
History
Original Manuscript: August 14, 2007
Manuscript Accepted: November 16, 2007
Published: January 7, 2008
Citation
Glen D. Gillen, Chris DiRocco, Peter Powers, and Shekhar Guha, "Temperature-dependent refractive index measurements of wafer-shaped InAs and InSb," Appl. Opt. 47, 164-168 (2008)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-47-2-164
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