Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy
Applied Optics, Vol. 47, Issue 2, pp. 213-223 (2008)
http://dx.doi.org/10.1364/AO.47.000213
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Abstract
The applicability of a general transfer-matrix method for optical analysis of multilayersreported earlier [Katsidis and Siapkas, Appl. Opt. 41, 3978 (2002)] is being extended so as to simulate asymmetric implantation doping profiles using distributions with four moments. The sensitivity of infrared reflectance spectra regarding the variation of the first four moments of a Pearson free carrier distribution is demonstrated. Experimental data of
© 2008 Optical Society of America
OCIS Codes
(080.2720) Geometric optics : Mathematical methods (general)
(160.6000) Materials : Semiconductor materials
(260.2030) Physical optics : Dispersion
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(260.2710) Physical optics : Inhomogeneous optical media
ToC Category:
Spectroscopy
History
Original Manuscript: October 26, 2007
Manuscript Accepted: November 19, 2007
Published: January 8, 2008
Citation
Charalambos C. Katsidis, "Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy," Appl. Opt. 47, 213-223 (2008)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-47-2-213
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