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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 47, Iss. 2 — Jan. 10, 2008
  • pp: 213–223

Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy

Charalambos C. Katsidis  »View Author Affiliations

Applied Optics, Vol. 47, Issue 2, pp. 213-223 (2008)

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The applicability of a general transfer-matrix method for optical analysis of multilayersreported earlier [Katsidis and Siapkas, Appl. Opt. 41, 3978 (2002)] is being extended so as to simulate asymmetric implantation doping profiles using distributions with four moments. The sensitivity of infrared reflectance spectra regarding the variation of the first four moments of a Pearson free carrier distribution is demonstrated. Experimental data of 1.5   MeV as well as 2.5   MeV As implantation into p-Si followed by annealing at 1100 ° C are presented, suggesting the need to use two joined Pearson IV distribution segments in the simulation of annealed profiles. A twin peak observed in the 1.5   MeV case is confirmed by Rutherford backscattering analysis.

© 2008 Optical Society of America

OCIS Codes
(080.2720) Geometric optics : Mathematical methods (general)
(160.6000) Materials : Semiconductor materials
(260.2030) Physical optics : Dispersion
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(260.2710) Physical optics : Inhomogeneous optical media

ToC Category:

Original Manuscript: October 26, 2007
Manuscript Accepted: November 19, 2007
Published: January 8, 2008

Charalambos C. Katsidis, "Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy," Appl. Opt. 47, 213-223 (2008)

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