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Applied Optics

Applied Optics


  • Editor: James C. Wyant
  • Vol. 47, Iss. 7 — Mar. 1, 2008
  • pp: 920–924

Diagonal scan measurement of Cr:LiSAF 20 ps ablation threshold

Ricardo Elgul Samad, Sonia Licia Baldochi, and Nilson Dias Vieira, Jr.  »View Author Affiliations

Applied Optics, Vol. 47, Issue 7, pp. 920-924 (2008)

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We report the measurement of the 20 ps ablation threshold of pure and Cr 3 + doped LiSAF samples using a simple method that employs a single scan of the sample across a focused laser beam waist. During the scan, a profile is etched in the sample surface, and the measurement of the maximum transversal size of the profile and the pulse peak power determine the ablation threshold, without any further knowledge of the beam geometry. Also, it was possible to measure the depth of the ablation profile, to calculate its effective volume, and to identify that the maximum material removal rate per pulse does not occur at the beam waist, which is not intuitively expected.

© 2008 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(220.4610) Optical design and fabrication : Optical fabrication
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7120) Ultrafast optics : Ultrafast phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

Original Manuscript: December 14, 2007
Manuscript Accepted: December 20, 2007
Published: February 28, 2008

Ricardo Elgul Samad, Sonia Licia Baldochi, and Nilson Dias Vieira, Jr., "Diagonal scan measurement of Cr:LiSAF 20 ps ablation threshold," Appl. Opt. 47, 920-924 (2008)

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