Effect of post-epitaxial-growth processing on the nonlinear response of saturable absorber
Applied Optics, Vol. 47, Issue 9, pp. 1235-1238 (2008)
http://dx.doi.org/10.1364/AO.47.001235
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Abstract
The nonlinear response of an ion-irradiated saturable Bragg reflector, further modified by thermal annealing, has been studied. We demonstrate that the absorption recovery time and the effective saturation fluence dependent on the pulse duration can be tailored over a wide range after epitaxial growth by the proper combination of ion irradiation and subsequent annealing. Thermal treatment is also an efficient means for the reduction of the unbleachable losses and the stabilization of the absorber parameters.
© 2008 Optical Society of America
OCIS Codes
(140.3510) Lasers and laser optics : Lasers, fiber
(160.6000) Materials : Semiconductor materials
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(320.5540) Ultrafast optics : Pulse shaping
(140.3538) Lasers and laser optics : Lasers, pulsed
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: October 4, 2007
Revised Manuscript: January 22, 2008
Manuscript Accepted: January 29, 2008
Published: March 18, 2008
Citation
Tommi Hakulinen, Robert Herda, and Oleg G. Okhotnikov, "Effect of post-epitaxial-growth processing on the nonlinear response of saturable absorber," Appl. Opt. 47, 1235-1238 (2008)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-47-9-1235
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