Growth of the autocloned ${\mathrm{Ta}}_2{\mathrm{O}}_5/{\mathrm{Si}\mathrm{O}}_2$ multilayer photonic crystal with a lateral sawtooth period was simulated. Ion-beam sputter (IBS) was applied to deposit the films and radio-frequency-bias (RF-bias) etching was applied simultaneously with the IBS on the ${\mathrm{Ta}}_2{\mathrm{O}}_5$ film. Both simulation and experiment showed that the quality of the autocloning can be controlled by the RF-bias power; there is an intermediate power range within which the drop of peak-to-valley height variation of the sawtooth profile can be reduced significantly such that a high degree of autocloning can be achieved. Analysis showed that simultaneous deposition and etching at the proper RF-bias power on the ${\mathrm{Ta}}_2{\mathrm{O}}_5$ film has the capability to compensate the flattening effect of the ${\mathrm{Si}\mathrm{O}}_2$ deposition such that the sawtooth surface profile can be maintained.