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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 48, Iss. 14 — May. 10, 2009
  • pp: 2693–2696

Study of asymmetric silicon cross-slot waveguides for polarization diversity schemes

Jose Vicente Galan, Pablo Sanchis, Jaime Garcia, Javier Blasco, Alejandro Martinez, and Javier Martí  »View Author Affiliations

Applied Optics, Vol. 48, Issue 14, pp. 2693-2696 (2009)

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We study cross-slot waveguides for polarization diversity schemes that simultaneously offer strong confinement in the slot region for both TE and TM polarizations. A symmetric configuration is initially presented to demonstrate that the same strong confinement and propagation constants can be obtained for both polarizations and slot thicknesses down to 50 nm . To make easier further realization of these waveguides, an asymmetric waveguide configuration with a vertical slot height of up to 120 nm is proposed. The waveguide parameters are then optimized taking into account a 220 nm silicon thickness. Our simulation results show that no beating issues between TE and TM modes is observed for beating lengths under 6.68 μm , thus opening the way to efficient implementations of polarization diversity approaches.

© 2009 Optical Society of America

OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(230.7370) Optical devices : Waveguides

ToC Category:
Integrated Optics

Original Manuscript: December 8, 2008
Revised Manuscript: April 15, 2009
Manuscript Accepted: April 22, 2009
Published: May 6, 2009

Jose Vicente Galan, Pablo Sanchis, Jaime Garcia, Javier Blasco, Alejandro Martinez, and Javier Martí, "Study of asymmetric silicon cross-slot waveguides for polarization diversity schemes," Appl. Opt. 48, 2693-2696 (2009)

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