In situ reflectance and optical constants of ion-beam-sputtered SiC films in the 58.4 to 149.2 nm region
Applied Optics, Vol. 48, Issue 24, pp. 4698-4702 (2009)
http://dx.doi.org/10.1364/AO.48.004698
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Abstract
The reflectance of freshly deposited SiC thin films is measured in situ for what we believe is the first time. SiC was deposited by means of ion-beam sputtering. Reflectance was measured as a function of the incidence angle in the far and extreme ultraviolet wavelengths from 58.4 to 149.2 nm. In situ measurements allowed obtaining the intrinsic reflectance of SiC films, which is somewhat larger than what had been measured for samples exposed to the atmosphere. Reflectance measurements were used to determine the optical constants of the material in the same spectral range. We compare our data to those of the literature corresponding to SiC films deposited by different techniques and exposed to the atmosphere. In situ determined optical constants will allow a more accurate design of multilayers containing ion-beam-sputtered SiC layers.
© 2009 Optical Society of America
OCIS Codes
(230.4040) Optical devices : Mirrors
(230.4170) Optical devices : Multilayers
(260.7200) Physical optics : Ultraviolet, extreme
(260.7210) Physical optics : Ultraviolet, vacuum
(310.6860) Thin films : Thin films, optical properties
ToC Category:
Physical Optics
History
Original Manuscript: May 22, 2009
Manuscript Accepted: July 7, 2009
Published: August 11, 2009
Citation
Mónica Fernández-Perea, José A. Méndez, José A. Aznárez, and Juan I. Larruquert, "In situ reflectance and optical constants of ion-beam-sputtered SiC films in the 58.4 to 149.2 nm region," Appl. Opt. 48, 4698-4702 (2009)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-48-24-4698
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