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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 48, Iss. 25 — Sep. 1, 2009
  • pp: F31–F36

All-optical logic gates using nonlinear effects in silicon-on-insulator waveguides

Mohammadreza Khorasaninejad and Simarjeet Singh Saini  »View Author Affiliations


Applied Optics, Vol. 48, Issue 25, pp. F31-F36 (2009)
http://dx.doi.org/10.1364/AO.48.000F31


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Abstract

We propose multiple all-optical logic operations in complementary metal oxide semiconductor compatible silicon-on-insulator waveguides based on three nonlinear phenomena, stimulated Raman scattering, free carrier absorption, and cross phase modulation. The performance of three optical logic operations is simulated by use of the finite-difference time-domain method. We achieved an extinction ratio of approximately 13 ‚ÄČ dB between two logic levels.

© 2009 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(130.3750) Integrated optics : Optical logic devices
(190.0190) Nonlinear optics : Nonlinear optics
(290.5910) Scattering : Scattering, stimulated Raman

ToC Category:
Photonic Integration

History
Original Manuscript: February 3, 2009
Revised Manuscript: May 11, 2009
Manuscript Accepted: May 17, 2009
Published: June 9, 2009

Citation
Mohammadreza Khorasaninejad and Simarjeet Singh Saini, "All-optical logic gates using nonlinear effects in silicon-on-insulator waveguides," Appl. Opt. 48, F31-F36 (2009)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-48-25-F31

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