Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform
Applied Optics, Vol. 48, Issue 31, pp. G125-G130 doi:10.1364/AO.48.00G125
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- OCIS Codes:
- (040.6040) Detectors : Silicon
- (130.0130) Integrated optics : Integrated optics
- (230.7370) Optical devices : Waveguides
- (250.0250) Optoelectronics : Optoelectronics
Citation
Rupesh Kumar Navalakhe, Nandita DasGupta, and Bijoy Krishna Das, "Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform," Appl. Opt. 48, G125-G130 (2009)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-48-31-G125
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Straight and S-bend rib waveguide structures with a novel design have been fabricated and characterized on a silicon-on-insulator (SOI) platform. For a typical straight rib waveguide, the single-mode waveguide at λ~1550 nm has been verified by measuring the near-field output with an IR camera, and a nearly polarization-independent mode size is found to be ~10 μm×4.5 μm. The waveguide loss has been estimated from low-finesse Fabry-Perot transmission characteristics, and a typical value of ~0.5 dB/cm is obtained. It is also shown experimentally that the bending radius of an asymmetrically etched S-bend waveguide can be ten times smaller than that of conventional symmetrically etched S-bend waveguides for similar optical losses. These bend waveguides (bending radii of ~1500 μm) are found to be low loss (<2.5 dB) and nearly polarization independent.
© 2009 Optical Society of America
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History
Original Manuscript: June 5, 2009
Manuscript Accepted: October 12, 2009
Revised Manuscript: October 8, 2009
Published: October 23, 2009
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Author Affiliations
Indian Institute of Technology Madras
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