Device design and simulation for GaN based dual wavelength LEDs
Applied Optics, Vol. 48, Issue 6, pp. 1178-1183 (2009)
http://dx.doi.org/10.1364/AO.48.001178
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Abstract
A comprehensive optical model for dual wavelength LEDs is developed using optical ray tracing programs. Optical dispersion of GaN, InGaN, and AlGaN is also included in this numerical model. The light extraction efficiency of LEDs can be calculated based on LED structure and material properties. Moreover, a LED device structure can be optimized to improve the light extraction efficiency.
© 2009 Optical Society of America
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
ToC Category:
Optoelectronics
History
Original Manuscript: August 29, 2008
Revised Manuscript: December 5, 2008
Manuscript Accepted: January 15, 2009
Published: February 19, 2009
Citation
Dong-Xue Wang, Ian T. Ferguson, and John A. Buck, "Device design and simulation for GaN based dual wavelength LEDs," Appl. Opt. 48, 1178-1183 (2009)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-48-6-1178
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