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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 10 — Apr. 1, 2010
  • pp: 1859–1864

Internal quantum efficiency modeling of silicon photodiodes

T. R. Gentile, S. W. Brown, K. R. Lykke, P. S. Shaw, and J. T. Woodward  »View Author Affiliations


Applied Optics, Vol. 49, Issue 10, pp. 1859-1864 (2010)
http://dx.doi.org/10.1364/AO.49.001859


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Abstract

Results are presented for modeling of the shape of the internal quantum efficiency (IQE) versus wave length for silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission optical trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01%. These results provide an important validation of the National Institute of Standards and Technology (NIST) spectral radiant power responsivity scale disseminated through the NIST Spectral Comparator Facility, as well as those scales disseminated by other National Metrology Institutes who have employed the same model.

OCIS Codes
(120.5630) Instrumentation, measurement, and metrology : Radiometry
(230.5170) Optical devices : Photodiodes

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: January 6, 2010
Manuscript Accepted: February 15, 2010
Published: March 30, 2010

Citation
T. R. Gentile, S. W. Brown, K. R. Lykke, P. S. Shaw, and J. T. Woodward, "Internal quantum efficiency modeling of silicon photodiodes," Appl. Opt. 49, 1859-1864 (2010)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-49-10-1859


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