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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 10 — Apr. 1, 2010
  • pp: 1876–1879

Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 μm applications

Georgi B. Hadjichristov and Ivan L. Stefanov  »View Author Affiliations

Applied Optics, Vol. 49, Issue 10, pp. 1876-1879 (2010)

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The applicability of layers of ion-implanted polymethyl methacrylate (PMMA) for beam splitting of laser light at the telecommunications wavelength of 1.55 μm is examined. Bulk PMMA is studied, subjected to low-energy ( 50 keV ) silicon ion implantation at various ion fluences in the range from 10 14 to 10 17 cm 2 . The formed ultrathin near-surface ion-implanted layer of a thickness of about 100 nm , buried in a depth of 100 nm , can be used to split (or combine) laser beams at 1.55 μm with a low absorption loss.

© 2010 Optical Society of America

OCIS Codes
(130.1750) Integrated optics : Components
(230.1360) Optical devices : Beam splitters
(240.1485) Optics at surfaces : Buried interfaces

ToC Category:
Optical Devices

Original Manuscript: December 4, 2009
Revised Manuscript: February 27, 2010
Manuscript Accepted: March 2, 2010
Published: March 26, 2010

Georgi B. Hadjichristov and Ivan L. Stefanov, "Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 μm applications," Appl. Opt. 49, 1876-1879 (2010)

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