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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 14 — May. 10, 2010
  • pp: 2635–2638

Thickness-dependent photoresponse characteristics of miscut La Sr Al O 4 single crystals for ultraviolet detection

Hao Ni, Song Qing Zhao, and Kun Zhao  »View Author Affiliations

Applied Optics, Vol. 49, Issue 14, pp. 2635-2638 (2010)

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We systematically study ultraviolet laser-induced ultrafast photovoltaic effect in miscut La Sr Al O 4 single crystal wafers with different thicknesses at ambient temperature without any applied bias. An open- circuit photovoltage (PV) is obtained when the wafer is irradiated by a 248 nm laser pulse of 20 ns duration. With the decrease of crystal thickness, the peak PV increased to a maximum of 2.66 mV at 340 μm and then decreased to 1.3 mV at 155 μm . Meanwhile, the 10%–90% rise time of photovoltaic responses declines gradually. The inner mechanism of the present thickness-dependent photovoltaic response is discussed.

© 2010 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(160.1890) Materials : Detector materials

ToC Category:

Original Manuscript: January 26, 2010
Revised Manuscript: April 5, 2010
Manuscript Accepted: April 9, 2010
Published: May 4, 2010

Hao Ni, Song Qing Zhao, and Kun Zhao, "Thickness-dependent photoresponse characteristics of miscut LaSrAlO4 single crystals for ultraviolet detection," Appl. Opt. 49, 2635-2638 (2010)

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