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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 19 — Jul. 1, 2010
  • pp: 3793–3797

High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter

Yan Zhang, Yongqiang Ning, Li Qin, Ye Wang, Jinjiang Cui, Guangyu Liu, Xing Zhang, Zhenfu Wang, Yanfang Sun, Yun Liu, and Lijun Wang  »View Author Affiliations

Applied Optics, Vol. 49, Issue 19, pp. 3793-3797 (2010)

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A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600 μm diameter VCSEL is suppressed from 30 ° to 15 ° , and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2.01 W .

© 2010 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.3295) Lasers and laser optics : Laser beam characterization
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: October 27, 2009
Revised Manuscript: June 11, 2010
Manuscript Accepted: June 15, 2010
Published: June 30, 2010

Yan Zhang, Yongqiang Ning, Li Qin, Ye Wang, Jinjiang Cui, Guangyu Liu, Xing Zhang, Zhenfu Wang, Yanfang Sun, Yun Liu, and Lijun Wang, "High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter," Appl. Opt. 49, 3793-3797 (2010)

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