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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 28 — Oct. 1, 2010
  • pp: 5378–5383

Optical properties of indium phosphide in the 50 200 Å wavelength region using a reflectivity technique

P. N. Rao, Mohammed H. Modi, and G. S. Lodha  »View Author Affiliations

Applied Optics, Vol. 49, Issue 28, pp. 5378-5383 (2010)

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The optical constants of indium phosphide (InP) in the soft x-ray region of 50 200 Å are determined from angle-dependent reflectivity measurements. The measurements are carried out using the reflectivity beam line at the Indus-1 synchrotron source. The derived optical constants are compared with tabulated values of Henke et al. [ At. Data Nucl. Data Tables 54, 181 (1993)]. Experimental values of δ and β are in close agreement with the tabulated values in the lower wavelength region of 50 120 Å . The experimental value indicates an edge shift of 0.4 Å toward the lower wavelength side from the phosphorous L-edge value of 92 Å . However, above the 120 Å region, where the indium N 2 edge falls at 160.7 Å , there is a huge difference between experimental and tabulated values. Both delta and beta values are significantly higher. In contrast to tabulated values of the β / δ ratio, which is more than 1 above the 140 Å region, the experimental measured ratio is found to be less than 1. This study presents the first reported experimental values of optical constants for InP in this wavelength range, to the best of our knowledge.

© 2010 Optical Society of America

OCIS Codes
(120.4530) Instrumentation, measurement, and metrology : Optical constants
(310.6845) Thin films : Thin film devices and applications
(250.0040) Optoelectronics : Detectors

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: June 17, 2010
Revised Manuscript: August 20, 2010
Manuscript Accepted: August 20, 2010
Published: September 24, 2010

P. N. Rao, Mohammed H. Modi, and G. S. Lodha, "Optical properties of indium phosphide in the 50–200Å wavelength region using a reflectivity technique," Appl. Opt. 49, 5378-5383 (2010)

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