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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 3 — Jan. 20, 2010
  • pp: 430–436

In situ monitoring for development of rectangular photoresist gratings on transparent substrates

Shiming Wei and Lifeng Li  »View Author Affiliations

Applied Optics, Vol. 49, Issue 3, pp. 430-436 (2010)

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We present a new method for in situ monitoring of a grating profile during the development process to control the critical dimensions of surface-relief rectangular photoresist gratings on transparent substrates. A He–Ne laser of visible wavelength is employed as the monitoring light source. We determine the height of the grating ridges from the first minimum value of the diffraction intensity curve of the zeroth transmission order and then obtain the duty cycle of the grating from the diffraction intensity of the 1 st transmission order. The effectiveness of our method has been demonstrated through the fabrication of rectangular photoresist gratings of 1200, 2200, and 3000   lines / mm on glass substrates. The experimental results are statistically compared with results extracted from scanning electron micrographs. Good agreement between the online, real-time measured results and the scanning electron microscopy results is obtained.

© 2010 Optical Society of America

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(120.1880) Instrumentation, measurement, and metrology : Detection
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Diffraction and Gratings

Original Manuscript: October 8, 2009
Manuscript Accepted: November 24, 2009
Published: January 15, 2010

Shiming Wei and Lifeng Li, "In situ monitoring for development of rectangular photoresist gratings on transparent substrates," Appl. Opt. 49, 430-436 (2010)

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  1. H. Lin and L. Li, “Fabrication of extreme-ultraviolet blazed gratings by use of direct argon-oxygen ion-beam etching through a rectangular photoresist mask,” Appl. Opt. 47, 6212-6218 (2008). [CrossRef]
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