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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 3 — Jan. 20, 2010
  • pp: 437–441

Infrared interference coating by use of Si 3 N 4 and SiO 2 films with ion-assisted deposition

Cheng-Chung Lee and Shih-Liang Ku  »View Author Affiliations


Applied Optics, Vol. 49, Issue 3, pp. 437-441 (2010)
http://dx.doi.org/10.1364/AO.49.000437


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Abstract

Silicon nitride ( Si 3 N 4 ) and silicon dioxide ( SiO 2 ) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7 μm . The application of Si 3 N 4 and SiO 2 films on the IR interference coating is demonstrated.

© 2010 Optical Society of America

OCIS Codes
(310.1620) Thin films : Interference coatings
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties
(310.6870) Thin films : Thin films, other properties
(310.4925) Thin films : Other properties (stress, chemical, etc.)

ToC Category:
Thin Films

History
Original Manuscript: October 26, 2009
Revised Manuscript: December 20, 2009
Manuscript Accepted: December 21, 2009
Published: January 15, 2010

Citation
Cheng-Chung Lee and Shih-Liang Ku, "Infrared interference coating by use of Si3N4 and SiO2 films with ion-assisted deposition," Appl. Opt. 49, 437-441 (2010)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-49-3-437

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