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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 49, Iss. 5 — Feb. 10, 2010
  • pp: 829–837

Optical properties and electronic band structure of Ag Ga Te 2 chalcopyrite semiconductor

Shinya Arai, Shunji Ozaki, and Sadao Adachi  »View Author Affiliations

Applied Optics, Vol. 49, Issue 5, pp. 829-837 (2010)

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The optical properties of Ag Ga Te 2 chalcopyrite semiconductor are studied by optical absorption, spectroscopic ellipsometry (SE), and thermoreflectance (TR) spectroscopy. Optical absorption spectra suggest that Ag Ga Te 2 is a direct-gap semiconductor having a bandgap of 1.2 eV at T = 300 K . The pseudodielectric-function spectra of Ag Ga Te 2 are determined by SE in the range between E = 1.2 and 5.2 eV for both states of polarization. These spectra reveal distinct structures at energies of the critical points in the Brillouin zone. The TR spectra are also measured in the E = 1.0 5.3 eV ranges at T = 20 K 300 K . The spin–orbit and crystal-field splitting parameters of Ag Ga Te 2 are determined to be Δ so = 0.70 eV and Δ cr = 0.23 eV , respectively.

© 2010 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(300.6470) Spectroscopy : Spectroscopy, semiconductors

ToC Category:

Original Manuscript: October 23, 2009
Revised Manuscript: December 18, 2009
Manuscript Accepted: December 18, 2009
Published: February 2, 2010

Shinya Arai, Shunji Ozaki, and Sadao Adachi, "Optical properties and electronic band structure of AgGaTe2 chalcopyrite semiconductor," Appl. Opt. 49, 829-837 (2010)

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