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Applied Optics

Applied Optics


  • Vol. 49, Iss. 7 — Mar. 1, 2010
  • pp: 1065–1068

Emissivity of microstructured silicon

Patrick G. Maloney, Peter Smith, Vernon King, Curtis Billman, Mark Winkler, and Eric Mazur  »View Author Affiliations

Applied Optics, Vol. 49, Issue 7, pp. 1065-1068 (2010)

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Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 μm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.

© 2010 Optical Society of America

OCIS Codes
(240.6490) Optics at surfaces : Spectroscopy, surface
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(040.6808) Detectors : Thermal (uncooled) IR detectors, arrays and imaging

ToC Category:
Optics at Surfaces

Original Manuscript: September 29, 2009
Revised Manuscript: January 11, 2010
Manuscript Accepted: January 22, 2010
Published: February 22, 2010

Patrick G. Maloney, Peter Smith, Vernon King, Curtis Billman, Mark Winkler, and Eric Mazur, "Emissivity of microstructured silicon," Appl. Opt. 49, 1065-1068 (2010)

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