OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 22 — Aug. 1, 2011
  • pp: 4457–4462

Comparative research on GaAs photocathodes before and after activation

Liang Chen, Yunsheng Qian, and Benkang Chang  »View Author Affiliations


Applied Optics, Vol. 50, Issue 22, pp. 4457-4462 (2011)
http://dx.doi.org/10.1364/AO.50.004457


View Full Text Article

Enhanced HTML    Acrobat PDF (479 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Obtaining higher quantum efficiency and more stability has been an important developing direction in the investigation of GaAs photocathodes. By solving the one-dimensional diffusion equation for no- equilibrium minority carriers of reflection-mode GaAs photocathode materials, we can get the equations of the surface photovoltage curve before activation and the spectral response curve after activation for uniform and exponential doping GaAs materials. Through experiments and fitting calculations for two doping structural materials designed by us, the parameters of the body materials are exactly measured by the surface photovoltage curves, and the curves for surface escape probability are also accurately fitted by the comparative research before and after activation. The differences for the fitting results of two doping structures are also well analyzed. This comparative research can form a closed-loop research for GaAs photocathodes and will help us to deeply study the varied doping structures and optimize Cs-O activation technology for GaAs photocathodes in the future.

© 2011 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(240.6675) Optics at surfaces : Surface photoemission and photoelectron spectroscopy

ToC Category:
Detectors

History
Original Manuscript: January 21, 2011
Revised Manuscript: May 28, 2011
Manuscript Accepted: June 6, 2011
Published: July 27, 2011

Citation
Liang Chen, Yunsheng Qian, and Benkang Chang, "Comparative research on GaAs photocathodes before and after activation," Appl. Opt. 50, 4457-4462 (2011)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-50-22-4457


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. J. J. Zou, B. K. Chang, and Z. Yang, “Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes,” Acta Phys. Sin. 56, 2992–2997 (2007).
  2. Z. Yang, B. K. Chang, J. J. Zou, J. L. Qiao, P. Gao, Y. P. Zeng, and H. Li, “Comparison between gradient doping GaAs photocathode and uniform-doping photocathode,” Appl. Opt. 46, 7035–7039 (2007). [CrossRef] [PubMed]
  3. I. Kudman and T. Seidel, “Absorption edge in degenerate p-type GaAs,” J. Appl. Phys. 33, 771–773 (1962). [CrossRef]
  4. Y. P. Zeng, X. Cao, L. J. Cui, M. Y. Kong, L. Pan, B. Q. Wang, and Z. P. Zhu, “High-quality metamorphic HEMT grown on GaAs substrates by MBE,” J. Cryst. Growth 210, 227–228(2001). [CrossRef]
  5. H. K. Pollehn, “Performance and reliability of third-generation image intensifiers,” Adv. Electron. Electron. Phys. 64, 63–69 (1995). [CrossRef]
  6. J. Niu, Y. Zhang, B. Chang, Z. Yang, and Y. Xiong, “Influence of exponential doping structure on the performance of GaAs photocathodes,” Appl. Opt. 48, 5445–5450 (2009). [CrossRef] [PubMed]
  7. Y. Zhang, B. Chang, Z. Yang, J. Niu, and Z. Jijun, “Distribution of carriers in gradient-doping transmission mode GaAs photocathodes grown by molecular beam epitaxy,” Chin. Phys. B 18, 4541–4546 (2009). [CrossRef]
  8. J. Zou, B. Chang, and Z. Yang, “Evolution of photocurrent during coadsorption of Cs and O on GaAs (100),” Chin. Phys. Lett. 24, 1731–1734 (2007). [CrossRef]
  9. J. J. Zou, B. K. Chang, H. L. Chen, and L. Liu, “Variation of quantum yield curves of GaAs photocathodes under illumination,” J. Appl. Phys. 101, 033126 (2007). [CrossRef]
  10. W. Li, C. W. Wu, W. G. Qin, G. C. Wang, S. Q. Lu, X. J. Dong, H. B. Dong, and Q. L. Sun, “Characterization of photovoltage evolution of ZnO films using a scanning Kelvin probe system,” Physica B 404, 2197–2201 (2009). [CrossRef]
  11. H. O. Olafsson, J. T. Gudmundsson, H. G. Svavarsson, and H. P. Gislason, “Hydrogen passivation of AlxGa1−xAs/GaAs studied by surface photovoltage spectroscopy,” Physica B 273, 689–692 (1999). [CrossRef]
  12. A. Kenta, S. Takushi, K. Hiroaki, and M. Mizuho, “Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale,” Physica B 376, 893–896 (2006). [CrossRef]
  13. M. Foussekis, J. D. Ferguson, A. A. Baski, H. Morko, and M. A. Reshchikov, “Role of the surface in the electrical and optical properties of GaN,” Physica B 404, 4892–4895(2009). [CrossRef]
  14. G. A. Antypas, L. W. James, and J. J. Uebbing, “Operation of III-V semiconductor photocathodes in the semitransparent mode,” J. Appl. Phys. 41, 2888–2894 (1970). [CrossRef]
  15. Y. Z. Liu, J. L. Moll, and W. E. Spicer, “Quantum yield of GaAs semitransparent photocathodes,” Appl. Phys. Lett. 17, 60–62(1970). [CrossRef]
  16. A. A. Turnbull and G. B. Evans, “Photoemission from GaAs-Cs-O,” J. Phys. D 1, 155–160 (1968). [CrossRef]
  17. D. G. Fisher, “The effect of Cs-O activation temperature on the surface escape probability of NEA (In, GaAs) photocathodes,” IEEE Trans. Electron Devices 21, 541–542 (1974). [CrossRef]
  18. J. Niu, Y. Zhang, B. Chang, and Y. Xiong, “Influence of varied doping structure on photoemissive property of photocathode,” Chin. Physica B 20, 044209 (2011). [CrossRef]
  19. W. W. Lui and M. Fukuma, “Exact solution of the Schrodinger equation across an arbitrary one-dimension piecewise-linear potential barrier,” J. Appl. Phys. 60, 1555–1559 (1986). [CrossRef]
  20. J. J. Zou, B. K. Chang, and X. Q. Du, “Activation of gradient doping GaAs photocathodes grown by molecular beam epitaxy,” J. Vac. Sci. Technol. 25, 401–404(2005).
  21. Y. Zhang, J. Niu, J. Zhao, J. Zou, B. Chang, F. Shi, and H. Chen, “Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes,” J. Appl. Phys. 108, 093108 (2010). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited