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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 3 — Jan. 20, 2011
  • pp: 323–328

Radiation thermometry of silicon wafers based on emissivity-invariant condition

Tohru Iuchi and Tomohiro Seo  »View Author Affiliations

Applied Optics, Vol. 50, Issue 3, pp. 323-328 (2011)

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An emissivity-invariant condition for a silicon wafer was determined by simulation modeling and it was confirmed experimentally. The p-polarized spectral emissivity at a wavelength of 900 nm and at temperatures over 900 K was constant at 0.83 at an angle of about 55.4 ° irrespective of large variations in the oxide layer thickness and the resistivity due to the different impurity doping concentrations of the silicon wafer. The expanded uncertainty, U c = k u c ( k = 2 ), of the temperature measurement is estimated to be 4.9 K . This result is expected to significantly enhance the accuracy of radiometric temperature measurements of silicon wafers in actual manufacturing processes.

© 2011 Optical Society of America

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.5630) Instrumentation, measurement, and metrology : Radiometry
(120.6780) Instrumentation, measurement, and metrology : Temperature
(160.6000) Materials : Semiconductor materials
(310.0310) Thin films : Thin films
(280.6780) Remote sensing and sensors : Temperature

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: September 16, 2010
Revised Manuscript: November 27, 2010
Manuscript Accepted: December 2, 2010
Published: January 14, 2011

Tohru Iuchi and Tomohiro Seo, "Radiation thermometry of silicon wafers based on emissivity-invariant condition," Appl. Opt. 50, 323-328 (2011)

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