OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 31 — Nov. 1, 2011
  • pp: G127–G130

Enhancing the lateral photovoltaic effect by coating the absorbing film on metal–oxide–semiconductor structure

Chaomin Zhang, Pengfei Zhu, Fuxin Wang, Yunxia Ping, Jianbao Wu, Qi Lin, and Bai Liang  »View Author Affiliations


Applied Optics, Vol. 50, Issue 31, pp. G127-G130 (2011)
http://dx.doi.org/10.1364/AO.50.00G127


View Full Text Article

Enhanced HTML    Acrobat PDF (180 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

By coating with a carbon film and graphene sheet (GS) on position-sensitive detectors based on the metal–oxide–semiconductor structure, sensitivity, linearity, and saturation power are significantly improved. We attribute this enhancement of absorptivity to lasers. The improvement effect of carbon film is more obvious than that of GS coating because of GS’s high conductivity.

© 2011 Optical Society of America

OCIS Codes
(040.5350) Detectors : Photovoltaic
(160.6000) Materials : Semiconductor materials

History
Original Manuscript: July 1, 2011
Revised Manuscript: October 8, 2011
Manuscript Accepted: September 9, 2011
Published: October 25, 2011

Citation
Chaomin Zhang, Pengfei Zhu, Fuxin Wang, Yunxia Ping, Jianbao Wu, Qi Lin, and Bai Liang, "Enhancing the lateral photovoltaic effect by coating the absorbing film on metal–oxide–semiconductor structure," Appl. Opt. 50, G127-G130 (2011)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-50-31-G127


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. W. Schottky, “Ueber den Entstehungsort der photoelektronen in kupfer-kupferoxydul-photozellen,” Phys. Z. 31, 913–925(1930).
  2. J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” in Proceedings of the IRE (IEEE, 1957), pp. 474–483. [CrossRef]
  3. R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49, 663–665 (1986). [CrossRef]
  4. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986). [CrossRef]
  5. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986). [CrossRef]
  6. R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986). [CrossRef]
  7. J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci.: Mater. Electron. 12, 387–393 (2001). [CrossRef]
  8. K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007). [CrossRef]
  9. D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85, 5073–5075 (2004). [CrossRef]
  10. J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” in Proceedings of IEEE Sensors (IEEE, 2002), pp. 836–840. [CrossRef]
  11. N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989). [CrossRef]
  12. C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95, 263506 (2009). [CrossRef]
  13. C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96, 171102 (2010). [CrossRef]
  14. S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008). [CrossRef]
  15. H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008). [CrossRef]
  16. C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010). [CrossRef]
  17. S. Q. Xiao and H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16, 3798–3806 (2008). [CrossRef] [PubMed]
  18. S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010). [CrossRef]
  19. S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si,” J. Phys. D 40, 5580–5583(2007). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited