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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 9 — Mar. 20, 2011
  • pp: C106–C110

Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

Bo-Huei Liao, Chien-Cheng Kuo, Pin-Jen Chen, and Cheng-Chung Lee  »View Author Affiliations

Applied Optics, Vol. 50, Issue 9, pp. C106-C110 (2011)

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Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF 4 / O 2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5 × 10 3 in the range from 400 to 800 nm when the CF 4 / O 2 ratio was 0.375. The resistivity of fluorine-doped SnO 2 films ( 1.63 × 10 3 Ω cm ) deposited at 300 ° C was 27.9 times smaller than that of undoped SnO 2 ( 4.55 × 10 2 Ω cm ). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68 × 10 4 Ω cm , which increased by less than 39% at a 450 ° C annealing temperature for 1 h in air.

© 2011 Optical Society of America

OCIS Codes
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties
(310.6870) Thin films : Thin films, other properties

Original Manuscript: July 30, 2010
Revised Manuscript: October 15, 2010
Manuscript Accepted: October 18, 2010
Published: November 10, 2010

Bo-Huei Liao, Chien-Cheng Kuo, Pin-Jen Chen, and Cheng-Chung Lee, "Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target," Appl. Opt. 50, C106-C110 (2011)

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