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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 9 — Mar. 20, 2011
  • pp: C197–C200

Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature

Meng-Chi Li, Chien-Cheng Kuo, Ssu-Hsiang Peng, Sheng-Hui Chen, and Cheng-Chung Lee  »View Author Affiliations

Applied Optics, Vol. 50, Issue 9, pp. C197-C200 (2011)

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Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the re sistivity of the films and improve their electrical properties compared to those prepared without H 2 , because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01 × 10 4 ( Ω - cm ) and 4.39 × 10 4 ( Ω - cm ) , respectively.

© 2011 Optical Society of America

OCIS Codes
(310.6860) Thin films : Thin films, optical properties
(310.7005) Thin films : Transparent conductive coatings

Original Manuscript: July 26, 2010
Revised Manuscript: September 30, 2010
Manuscript Accepted: October 29, 2010
Published: December 10, 2010

Meng-Chi Li, Chien-Cheng Kuo, Ssu-Hsiang Peng, Sheng-Hui Chen, and Cheng-Chung Lee, "Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature," Appl. Opt. 50, C197-C200 (2011)

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