Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature

Not Accessible

Your library or personal account may give you access

Abstract

Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the re sistivity of the films and improve their electrical properties compared to those prepared without H2, because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01×104(Ω-cm) and 4.39×104(Ω-cm), respectively.

© 2010 Optical Society of America

Full Article  |  PDF Article
More Like This
Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

Bo-Huei Liao, Chien-Cheng Kuo, Pin-Jen Chen, and Cheng-Chung Lee
Appl. Opt. 50(9) C106-C110 (2011)

Near infrared enhancement in CIGS-based solar cells utilizing a ZnO:H window layer

Chi-Li Yeh, Hung-Ru Hsu, Sheng-Hui Chen, and Yung-sheng Liu
Opt. Express 20(S6) A806-A811 (2012)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (5)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved