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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 50, Iss. 9 — Mar. 20, 2011
  • pp: C392–C395

Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlO x N y thin films

Sheng-Hui Chen, Chun-Che Hsu, Hsuan-Wen Wang, Chi-Li Yeh, Shao-Ze Tseng, Hung-Ju Lin, Cheng-Chung Lee, and Cheng-Yu Peng  »View Author Affiliations


Applied Optics, Vol. 50, Issue 9, pp. C392-C395 (2011)
http://dx.doi.org/10.1364/AO.50.00C392


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Abstract

Negative charge material, AlO x N y , has been fabricated to passivate the surface of p-type silicon. The fabrication of AlO x N y was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10 11 cm 2 to 2.26 × 10 12 cm 2 after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1 × 10 5 to 32 cm/s.

© 2011 Optical Society of America

OCIS Codes
(310.1860) Thin films : Deposition and fabrication
(310.6870) Thin films : Thin films, other properties

History
Original Manuscript: August 2, 2010
Revised Manuscript: December 22, 2010
Manuscript Accepted: December 27, 2010
Published: February 15, 2011

Citation
Sheng-Hui Chen, Chun-Che Hsu, Hsuan-Wen Wang, Chi-Li Yeh, Shao-Ze Tseng, Hung-Ju Lin, Cheng-Chung Lee, and Cheng-Yu Peng, "Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films," Appl. Opt. 50, C392-C395 (2011)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-50-9-C392

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