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Utilization of frequency information in a linear wavenumber-scanning interferometer for profile measurement of a thin film |
Applied Optics, Vol. 51, Issue 13, pp. 2429-2435 (2012)
http://dx.doi.org/10.1364/AO.51.002429
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Abstract
The positions of the front and rear surfaces of a silicon dioxide film with 4 μm thickness is measured with a novel and simple method in which both amplitude and phase of a sinusoidal wave signal corresponding to one optical path difference of a reflecting surface is utilized in a linear wavenumber-scanning interferometer. For this utilization, the scanning width and the position of the reference mirror are adjusted exactly to distinguish the two sinusoidal waves corresponding to the two surfaces of the film. The scanning width of the wavenumber and wavelength of the light source are
© 2012 Optical Society of America
OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.3940) Instrumentation, measurement, and metrology : Metrology
(120.4640) Instrumentation, measurement, and metrology : Optical instruments
(120.5060) Instrumentation, measurement, and metrology : Phase modulation
(120.6650) Instrumentation, measurement, and metrology : Surface measurements, figure
ToC Category:
Instrumentation, Measurement, and Metrology
History
Original Manuscript: August 11, 2011
Revised Manuscript: March 10, 2012
Manuscript Accepted: March 16, 2012
Published: May 1, 2012
Citation
Osami Sasaki, Satoshi Hirakubo, Samuel Choi, and Takamasa Suzuki, "Utilization of frequency information in a linear wavenumber-scanning interferometer for profile measurement of a thin film," Appl. Opt. 51, 2429-2435 (2012)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-51-13-2429
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