In this work, the effects of size and wetting layer (WL) on subband electronic envelop functions, eigenenergies, linear and nonlinear absorption coefficients, and refractive indices of a dome-shaped InAs/GaAs quantum dot (QD) were investigated. In our model, a dome of InAs QD with its WL embedded in a GaAs matrix was considered. A finite height barrier potential at the InAs/GaAs interface was assumed. To calculate envelope functions and eigenenergies, the effective one-electronic-band Hamiltonian and electron effective mass approximation were used. The linear and nonlinear optical properties were calculated by the density matrix formalism.
© 2012 Optical Society of America
Original Manuscript: November 16, 2011
Revised Manuscript: February 20, 2012
Manuscript Accepted: April 13, 2012
Published: June 18, 2012
Mohammad Sabaeian and Ali Khaledi-Nasab, "Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer," Appl. Opt. 51, 4176-4185 (2012)