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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 18 — Jun. 20, 2012
  • pp: 4176–4185

Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer

Mohammad Sabaeian and Ali Khaledi-Nasab  »View Author Affiliations

Applied Optics, Vol. 51, Issue 18, pp. 4176-4185 (2012)

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In this work, the effects of size and wetting layer (WL) on subband electronic envelop functions, eigenenergies, linear and nonlinear absorption coefficients, and refractive indices of a dome-shaped InAs/GaAs quantum dot (QD) were investigated. In our model, a dome of InAs QD with its WL embedded in a GaAs matrix was considered. A finite height barrier potential at the InAs/GaAs interface was assumed. To calculate envelope functions and eigenenergies, the effective one-electronic-band Hamiltonian and electron effective mass approximation were used. The linear and nonlinear optical properties were calculated by the density matrix formalism.

© 2012 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optical Devices

Original Manuscript: November 16, 2011
Revised Manuscript: February 20, 2012
Manuscript Accepted: April 13, 2012
Published: June 18, 2012

Mohammad Sabaeian and Ali Khaledi-Nasab, "Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer," Appl. Opt. 51, 4176-4185 (2012)

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