Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.
© 2012 Optical Society of America
Original Manuscript: March 15, 2012
Revised Manuscript: May 3, 2012
Manuscript Accepted: May 30, 2012
Published: July 26, 2012
Oleg G. Semyonov, Arsen V. Subashiev, Alexander Shabalov, Nadia Lifshitz, Zhichao Chen, Takashi Hosoda, and Serge Luryi, "Reflectance reduction of InP wafers after high-temperature annealing," Appl. Opt. 51, 5425-5431 (2012)