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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 22 — Aug. 1, 2012
  • pp: 5425–5431

Reflectance reduction of InP wafers after high-temperature annealing

Oleg G. Semyonov, Arsen V. Subashiev, Alexander Shabalov, Nadia Lifshitz, Zhichao Chen, Takashi Hosoda, and Serge Luryi  »View Author Affiliations

Applied Optics, Vol. 51, Issue 22, pp. 5425-5431 (2012)

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Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.

© 2012 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(240.6490) Optics at surfaces : Spectroscopy, surface

ToC Category:

Original Manuscript: March 15, 2012
Revised Manuscript: May 3, 2012
Manuscript Accepted: May 30, 2012
Published: July 26, 2012

Oleg G. Semyonov, Arsen V. Subashiev, Alexander Shabalov, Nadia Lifshitz, Zhichao Chen, Takashi Hosoda, and Serge Luryi, "Reflectance reduction of InP wafers after high-temperature annealing," Appl. Opt. 51, 5425-5431 (2012)

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  1. S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93, 251108 (2008). [CrossRef]
  2. B.-J. Kim and J. Kim, “Fabrication of GaAs subwavelength structure (SWS) for solar cell applications,” Opt. Express 19, A326–A330 (2011). [CrossRef]
  3. S. Wang, X. Z. Yu, and H. T. Fan, “Simple lithographic approach for subwavelength structure antireflection,” Appl. Phys. Lett. 91, 061105 (2007). [CrossRef]
  4. A. A. Cruz-Cabrera, L. I. Basilio, D. W. Peters, J. R. Wendt, S. A. Kemme, and S. Samora, “Fabrication and testing of plasmonic optimized transmission and reflection coatings,” Proc. SPIE 6883, 68830R (2008). [CrossRef]
  5. J. D. Oberstar, B. G. Streetman, J. E. Baker, N. L. Finnegan, E. A. Sammann, and P. Williams, “Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies,” Thin Solid Films 94, 149–159 (1982). [CrossRef]
  6. M. Yamaguchi and K. Ando, “Thermal oxidation of InP and properties of oxide film,” J. Appl. Phys. 51, 5007–5012 (1980). [CrossRef]
  7. A. Nelson, K. Geib, and C. W. Wilmsen, “Composition and structure of thermal oxides of indium phosphide,” J. Appl. Phys. 54, 4134–4140 (1983). [CrossRef]
  8. A. A. Studna and G. J. Gualtieri, “Optical properties and water absorption of anodically grown native oxide on InP,” Appl. Phys. Lett. 39, 965 (1981). [CrossRef]
  9. W. F. Wu and B. S. Chiou, “Effect of annealing on electrical and optical properties of RF magnetron sputtered indium tin oxide films,” Appl. Surf. Sci. 68, 497–504 (1993). [CrossRef]
  10. FreeSnell: Refractive Index Spectra nk-data, http://people.csail.mit.edu/jaffer/FreeSnell/nk.html ; New Semiconductor Materials. Characteristics and Properties, n, k database, http://www.ioffe.ru/SVA/NSM/nk/index.html .
  11. Y. Robach, A. Gagnair, J. Joseph, E. Bergignat, and G. Hollinger, “Optical properties of native oxides on InP,” Thin Solid Films 162, 81–88 (1988). [CrossRef]
  12. O. Semyonov, A. Subashiev, Z. Chen, and S. Luryi, “Radiation efficiency of heavily doped bulk n-InP semiconductor,” J. Appl. Phys. 108, 013101 (2010). [CrossRef]
  13. S. Luryi and A. Subashiev, “Semiconductor scintillator for three-dimensional array of radiation detectors,” in Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy (Wiley Interscience, 2010), pp. 331–346.
  14. We used ACROTEC wafers from NIKKO Metals.
  15. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices(Wiley, 2007), p. 54.
  16. C. R. Bull, “A model of reflection of near-infrared radiation,” J. Mod. Opt. 37, 1955–1964 (1990). [CrossRef]
  17. O. Semyonov, A. Subashiev, A. Shabalov, N. Lifshitz, Z. Chen, T. Hosoda, and S. Luryi, “Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing,” submitted to J. Appl. Phys., http://arxiv.org/abs/1112.5398v1 (2011).
  18. S. D. Smith, “Design of multilayer filters by considering two effective interfaces,” J. Opt. Soc. Am. A 48, 43–49(1958). [CrossRef]
  19. D. E. Aspnes and A. A. Studina, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs and In Sb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983). [CrossRef]
  20. X. Lui, M. S. Denker, and E. A. Irene, “An oxygen tracer study of InP oxidation,” J. Electrochem. Soc. 139, 799–802 (1992). [CrossRef]
  21. J. Tauc, “Optical properties of amorphous semiconductors,” in Amorphous and Liquid Semiconductors, J. Tauc, ed. (Plenum, 1974), p. 159.
  22. D. Bedeaux and J. Vlieger, Optical Properties of Surfaces(Imperial College Press, 2004).
  23. T. Inoue, H. Shimakura, K. Kainosho, R. Hirano, and O. Oda, “Annealing of undoped InP and evaluation by luminescence,” J. Electrochem. Soc. 137, 1283–1288 (1990). [CrossRef]

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