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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 30 — Oct. 20, 2012
  • pp: 7229–7235

Thermal expansion coefficient and thermomechanical properties of SiNx thin films prepared by plasma-enhanced chemical vapor deposition

Chuen-Lin Tien and Tsai-Wei Lin  »View Author Affiliations

Applied Optics, Vol. 51, Issue 30, pp. 7229-7235 (2012)

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We present a new method based on fast Fourier transform (FFT) for evaluating the thermal expansion coefficient and thermomechanical properties of thin films. The silicon nitride thin films deposited on Corning glass and Si wafers were prepared by plasma-enhanced chemical vapor deposition in this study. The anisotropic residual stress and thermomechanical properties of silicon nitride thin films were studied. Residual stresses in thin films were measured by a modified Michelson interferometer associated with the FFT method under different heating temperatures. We found that the average residual-stress value increases when the temperature increases from room temperature to 100°C. Increased substrate temperature causes the residual stress in SiN x film deposited on Si wafers to be more compressive, but the residual stress in SiN x film on Corning glass becomes more tensile. The residual-stress versus substrate-temperature relation is a linear correlation after heating. A double substrate technique is used to determine the thermal expansion coefficients of the thin films. The experimental results show that the thermal expansion coefficient of the silicon nitride thin films is 3.27 × 10 6 ° C 1 . The biaxial modulus is 1125 GPa for SiN x film.

© 2012 Optical Society of America

OCIS Codes
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(240.0310) Optics at surfaces : Thin films
(310.6870) Thin films : Thin films, other properties

ToC Category:
Thin Films

Original Manuscript: June 25, 2012
Revised Manuscript: September 5, 2012
Manuscript Accepted: September 6, 2012
Published: October 15, 2012

Chuen-Lin Tien and Tsai-Wei Lin, "Thermal expansion coefficient and thermomechanical properties of SiNx thin films prepared by plasma-enhanced chemical vapor deposition," Appl. Opt. 51, 7229-7235 (2012)

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  1. J. H. Kim and K. W. Chung, “Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering,” J. Appl. Phys. 83, 5831–5839 (1998). [CrossRef]
  2. R. K. Pandey, L. S. Patil, J. P. Bange, and D. K. Gautam, “Growth and characterization of silicon nitride films for optoelectronics applications,” Opt. Mater. 27, 139–146 (2004). [CrossRef]
  3. L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663–670 (2005). [CrossRef]
  4. P. L. Ong, J. Wei, E. H. Tay, and C. Iliescu, “A new fabrication method for low stress PECVD–SiNx layers,” J. Phys. Conf. Ser. 34, 764–769 (2006). [CrossRef]
  5. C. C. Lee, K. H. Lee, C. J. Tang, C. C. Jaing, and H. C. Chen, “Reduction of residual stress in optical silicon nitride thin films prepared by radio-frequency ion beam sputtering deposition,” Opt. Eng. 49, 063802 (2010). [CrossRef]
  6. V. Joglekar, R. N. Karekar, and K. Sathianandan, “Stress in thin films due to volume change on solidification,” Phys. Status Solidi 17, K89–K92 (1973). [CrossRef]
  7. R. W. Hoffman, “Stress distributions and thin film mechanical properties,” Surf. Interface Anal. 3, 62–66 (1981). [CrossRef]
  8. X. Dong, X. Feng, K. C. Hwang, S. Ma, and Q. Ma, “Full-field measurement of nonuniform stresses of thin films at high temperature,” Opt. Express 19, 13201–13208 (2011). [CrossRef]
  9. G. Suchaneck, V. Norkus, and G. Gerlach, “Low temperature PECVD-deposited silicon nitride thin films for sensor applications,” Surf. Coat. Technol. 142–144, 808–812 (2001). [CrossRef]
  10. J. Flewitt, A. P. Dyson, J. Robertson, and W. I. Milne, “Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapor deposition,” Thin Solid Films 383, 172–177 (2001). [CrossRef]
  11. Z. B. Zhao, S. M. Yalisove, and J. C. Bilello, “Stress anisotropy and stress gradient in magnetron sputtered films with different deposition geometries,” J. Vac. Sci. Technol. A 24, 195–201 (2006). [CrossRef]
  12. W. J. Chang, T. H. Fang, and C. I. Weng, “Thermoviscoelastic stresses in thin films/substrate system,” Thin Solid Films 515, 3693–3697 (2007). [CrossRef]
  13. L. B. Freund, and S. Suresh, Thin Film Materials: Stress, Defect Formation and Surface Evolution (Cambridge University, 2004).
  14. J. Thurn, and M. P. Hughey, “Evaluation of film biaxial modulus and coefficient of thermal expansion from thermoelastic film stress measurements,” J. Appl. Phys. 95, 7892–7897 (2004). [CrossRef]
  15. M. Takeda, H. Ina, and S. Kobayashi, “Fourier-transform method of fringe-pattern analysis for computer-based topography and interferometry,” J. Opt. Soc. Am. 72, 156–160 (1982). [CrossRef]
  16. M. Takeda and K. Mutoh, “Fourier-transform profilometry for the automatic measurement of 3-D object shapes,” Appl. Opt. 22, 3977–3982 (1983). [CrossRef]
  17. W. W. Macy, “Two-dimensional fringe-pattern analysis,” Appl. Opt. 22, 3898–3901 (1983). [CrossRef]
  18. C. L. Tien and H. D. Zeng, “Measuring residual stress of anisotropic thin film by fast Fourier transform,” Opt. Express 18, 16594–16600 (2010). [CrossRef]
  19. C. L. Tien, T. W. Lin, S. S. Jyu, H. D. Tseng, C. S. Lin, and M. C. Liu, “The measurement of anisotropic stress in obliquely-deposited thin films by fast Fourier transform and Gaussian filter,” Phys. Procedia 19, 21–26 (2011). [CrossRef]
  20. G. G. Stoney, “The tension of metallic films deposited by electrolysis,” Proc. R. Soc. Lond. A 82, 172–175 (1909). [CrossRef]
  21. R. W. Hoffman, Physics of Thin Films, G. Hass and R. E. Thun, eds. (Academic, 1966), Vol. 3, pp. 211–223.
  22. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983). [CrossRef]
  23. M. Maeda and K. Ikeda, “Stress evaluation of radio-frequency-biased plasma-enhanced chemical vapor deposited silicon nitride films,” J. Appl. Phys. 83, 3865–3870 (1998). [CrossRef]

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