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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 31 — Nov. 1, 2012
  • pp: 7662–7667

Energy distributions of electrons emitted from reflection-mode Cs-covered GaAs photocathodes

Jijun Zou, Yijun Zhang, Xincun Peng, Wenjuan Deng, Lin Feng, and Benkang Chang  »View Author Affiliations

Applied Optics, Vol. 51, Issue 31, pp. 7662-7667 (2012)

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By calculating the energy distributions of electrons reaching the photocathode surface and solving the Schrödinger equation for an electron tunneling through the surface potential barrier, we have obtained an equation to calculate the energy distributions of electrons emitted from reflection-mode Cs-covered GaAs photocathodes based on a two-minima diffusion model. According to the equation, we studied the effects of incident photon energies, diffusion lengths, and surface potential barrier on the electron energy distributions. The equation was also used to fit the measured electron energy distribution curves and the cathode performance parameters were obtained from the fitting. The Γ and L peaks in the theoretical curves are in agreement with the peaks in the experimental curves. The fitted barrier thickness 1.7 Å exactly reflects the GaAs-Cs dipole layer thickness.

© 2012 Optical Society of America

OCIS Codes
(040.3780) Detectors : Low light level
(160.6000) Materials : Semiconductor materials

ToC Category:

Original Manuscript: September 5, 2012
Manuscript Accepted: October 1, 2012
Published: October 29, 2012

Jijun Zou, Yijun Zhang, Xincun Peng, Wenjuan Deng, Lin Feng, and Benkang Chang, "Energy distributions of electrons emitted from reflection-mode Cs-covered GaAs photocathodes," Appl. Opt. 51, 7662-7667 (2012)

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