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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 51, Iss. 7 — Mar. 1, 2012
  • pp: 894–897

Schottky barrier characteristics and internal gain mechanism of TiO2 UV detectors

Haifeng Zhang, Min Zhang, Caihui Feng, Weiyou Chen, Caixia Liu, Jingran Zhou, and Shengping Ruan  »View Author Affiliations

Applied Optics, Vol. 51, Issue 7, pp. 894-897 (2012)

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High-responsivity metal–semiconductor–metal TiO2 UV photodetectors with Ni and Au electrodes were fabricated identically. Their Schottky barrier heights and photocurrent gain mechanism were studied. The effective barrier height Φ and ideality factor n were evaluated according to the thermionic emission theory. The result that ΦNi was lower than ΦAu may be attributed to the electron transfer from Ni to the TiO2 substrate, which would lead to a dipole layer and, accordingly, decrease the barrier height. In addition, the I–V characteristics of the Ni/TiO2/Ni and Au/TiO2/Au photodetectors were observed. A significant internal gain was obtained, and the mechanism of the internal gain was studied by the phototransistor model in detail.

© 2012 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.0250) Optoelectronics : Optoelectronics

ToC Category:

Original Manuscript: August 17, 2011
Revised Manuscript: November 1, 2011
Manuscript Accepted: November 1, 2011
Published: February 28, 2012

Haifeng Zhang, Min Zhang, Caihui Feng, Weiyou Chen, Caixia Liu, Jingran Zhou, and Shengping Ruan, "Schottky barrier characteristics and internal gain mechanism of TiO2 UV detectors," Appl. Opt. 51, 894-897 (2012)

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