The theory of four-wave mixing (FWM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is discussed by combining the QD rate equations system, the quantum-mechanical density-matrix theory, and the pulse propagation in QD SOAs including the three region of QD structure ground state (GS), excited state (ES), and wetting layer. Also, relations for differential gain, gain integral, and nonlinear susceptibility of both pump, probe, and signal pulses were discussed. Gain and differential gain have been calculated for QD structure. FWM efficiency and its components [spectral hole burning (SHB), carrier heating, and carrier density pulsation] are calculated. It is found that inclusion of ES in the formulas and in the calculations is essential since it works as a carrier reservoir for GS. It is found that QD SOA with enough capture time from ES to GS will reduce the SHB component, and so it is suitable for telecommunication applications that require symmetric conversion and independent detuning.
© 2013 Optical Society of America
Original Manuscript: January 15, 2013
Revised Manuscript: April 1, 2013
Manuscript Accepted: April 1, 2013
Published: May 7, 2013
Ahmed H. Flayyih and Amin H. Al-Khursan, "Four-wave mixing in quantum dot semiconductor optical amplifiers," Appl. Opt. 52, 3156-3165 (2013)