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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 52, Iss. 15 — May. 20, 2013
  • pp: 3444–3450

Effect of reannealing temperature on characteristics of nanocrystalline Sn-doped In2O3 thin films for organic photovoltaic cell applications

Hamed Reza Modayemzadeh, Mohsen Ghasemi Varnamkhasti, and Hosein Zabolian  »View Author Affiliations


Applied Optics, Vol. 52, Issue 15, pp. 3444-3450 (2013)
http://dx.doi.org/10.1364/AO.52.003444


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Abstract

In this study, nanocrystalline Sn-doped In2O3 (ITO) films were deposited by electron beam evaporation technique and were annealed in air atmosphere from 300°C to 500°C for 30 min. Then, the annealed ITO films in air at 450°C were reannealed in vacuum for 1 h at different temperatures from 300°C to 500°C. The effects of reannealing temperature on structural, electrical, and optical properties of the ITO films were investigated. Increasing reannealing temperature from 300°C to 500°C reduced sheet resistance of ITO thin films from 38 to 12(Ω/sq). The highest transparency over the visible wavelength region of spectrum (95%) was obtained for reannealed films at 450°C. The optimum reannealing temperature for these films is 450°C. Refractive index at 550 nm and porosity for ITO films reannealed at 450°C were 1.92% and 21.2%, respectively. The allowed direct bandgap at different reannealing temperature was evaluated to be in the range of 4.1–4.28 eV. X-ray diffraction results showed that the reannealed films were polycrystalline and a rise in grain size was observed in them. The average grain size in the films reannealed in vacuum at 450°C is about 48.6 nm. Atomic force microscope images indicated that the grain size and root-mean-square roughness films depend on the reannealing temperature. It has been found that reannealing temperature is a key factor in controlling the structural, electrical, and optical properties of ITO films. The power conversion efficiency of the device with ITO films reannealed at 450°C is 1.22% and it is about 58% higher than that of the device without it. This indicates that this film is a promising transparent electrode for organic photovoltaic cells.

© 2013 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(310.7005) Thin films : Transparent conductive coatings

ToC Category:
Thin Films

History
Original Manuscript: February 19, 2013
Revised Manuscript: April 5, 2013
Manuscript Accepted: April 9, 2013
Published: May 13, 2013

Citation
Hamed Reza Modayemzadeh, Mohsen Ghasemi Varnamkhasti, and Hosein Zabolian, "Effect of reannealing temperature on characteristics of nanocrystalline Sn-doped In2O3 thin films for organic photovoltaic cell applications," Appl. Opt. 52, 3444-3450 (2013)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-52-15-3444


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References

  1. V. K. Jain, P. Kumar, D. Bhandari, and Y. K. Vijay, “Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films,” Thin Solid Films 519, 1082–1086 (2010). [CrossRef]
  2. H. R. Fallah, M. Ghasemi Varnamkhasti, and M. G. Vahid, “Substrate temperature effect on transparent heat reflecting nanocrystalline ITO films prepared by electron beam evaporation,” Renewable Energy 35, 1527–1530 (2010). [CrossRef]
  3. B. H. Lee, I. G. Kim, S. W. Cho, and S.-H. Lee, “Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application,” Thin Solid Films 302, 25–30 (1997). [CrossRef]
  4. B. K. Min and S. D. Choi, “SnO2 thin film gas sensor fabricated by ion beam deposition,” Sens. Actuators B Chem. 98, 239–246 (2004). [CrossRef]
  5. E. Nam, Y. H. Kang, D. Jung, and Y. S. Kim, “Anode material properties of Ga-doped ZnO thin films by pulsed DC magnetron sputtering method for organic light emitting diodes,” Thin Solid Films 518, 6245–6248 (2010). [CrossRef]
  6. S. K. Poznyak, A. N. Golubev, and A. I. Kulak, “Correlation between surface properties and photocatalytic and photoelectrochemical activity of In2O3 nanocrystalline films and powders,” Surf. Sci. 454, 396–401 (2000). [CrossRef]
  7. M. G. Varnamkhasti, H. R. Fallah, M. Mostajaboddavati, R. Ghasemi, and A. Hassanzadeh, “Comparison of metal oxides as anode buffer layer for small molecule organic photovoltaic cells,” Sol. Energy Mater. Sol. Cells 98, 379–384 (2012). [CrossRef]
  8. H. R. Fallah, M. Ghasemi, A. Hassanzadeh, and H. Steki, “The effect of annealing on structural, electrical, and optical properties of nanostructured ITO films prepared by e-beam evaporation,” Mater. Res. Bull. 42, 487–496 (2007). [CrossRef]
  9. M. Girtan, G. I. Rusu, G. G. Rusu, and S. Gurlui, “Influence of oxidation conditions on the properties of indium oxide thin films,” Appl. Surf. Sci. 162, 492–498 (2000). [CrossRef]
  10. Y. H. Yuna, H. W. Han, M. J. Choi, and A. S. C. Choi, “Effects of sequential annealing processes on surface morphology and resistivity of indium-tin oxide (ITO) thin films fabricated by chemical solution deposition,” J. Ceram. Process Res. 6, 259–262 (2005).
  11. M. J. Alam and D. C. Cameron, “Optical and electrical properties of transparent conductive ITO thin films deposited by sol-gel process,” Thin Solid Films 377, 455–459 (2000). [CrossRef]
  12. P. Manivannan and A. Subrahmanyam, “Studies on the electrical and optical properties of reactive electron beam evaporated indium tin oxide films,” J. Phys. D 26, 1510–1515 (1993). [CrossRef]
  13. R. X. Wang, C. D. Beling, S. Fung, A. B. Djurisic, C. C. Ling, C. Kwong, and S. Li, “Influence of annealing temperature and environment on the properties of indium tin oxide thin films,” J. Phys. D 38, 2000–2005 (2005). [CrossRef]
  14. E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev. 93, 632–633 (1954). [CrossRef]
  15. J. C. Manifacier, J. Gasiot, and J. P. Fillard, “A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film,” J. Phys. E 9, 1002–1004 (1976). [CrossRef]
  16. H. M. Ali, M. M. Abd El-Raheem, N. M. Megahed, and H. A. Mohamed, “Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications,” J. Phys. Chem. Solids Suppl. 67, 1823–1829 (2006).
  17. S. H. Oh, D. J. Kim, S. H. Hahn, and E. J. Kim, “Comparison of optical and photocatalytic properties of TiO2 thin films prepared by electron-beam evaporation and sol gel dip-coating,” Mater. Lett. 57, 4151–4155 (2003). [CrossRef]
  18. S. A. Knickerbocker and A. K. Kulkarni, “Estimation and verification of the optical properties of indium tin oxide based on the energy band diagram,” J. Vac. Sci. Technol. B 14, 757–761 (1996).
  19. R. Azimirad, O. Akhavan, and A. Z. Moshfegh, “Influence of coloring voltage and thickness on electrochromical properties of e-beam evaporated WO3 thin films,” J. Electrochem. Soc. 153, E11–E16 (2006). [CrossRef]
  20. E. Gagaoudakis, M. Bender, E. Douloufakis, N. Katsarakis, E. Natasakou, V. Cimalla, and G. Kiriakidis, “The influence of deposition parameters on room temperature ozone sensing properties of InOx film,” Sens. Actuators B Chem. 80, 155–161 (2001). [CrossRef]
  21. G. Haacke, “New figure of merit for transparent conductors,” J. Appl. Phys. 47, 4086–4089 (1976). [CrossRef]
  22. D. Kim, “Properties of ITO/Cu/ITO multilayer films for application as low resistance transparent electrodes,” Trans. Electr. Electron. Mater. 10, 165–168 (2009). [CrossRef]
  23. J. George and C. S. Menon, “Electrical and optical properties of electron beam evaporated ITO thin films,” Surf. Coat. Technol. 132, 45–48 (2000). [CrossRef]
  24. Z. Qiao, R. Latz, and D. Mergel, “Thickness dependence of In2O3:Sn film growth,” Thin Solid Films 466, 250–258 (2004). [CrossRef]
  25. D. Vaufrey, M. Ben Khalifa, M. P. Besland, C. Sandu, M. G. Blanchin, V. Teodorescu, J. A. Roger, and J. Tardy, “Reactive ion etching of sol-gel processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes,” Synth. Met. 127, 207–211 (2002). [CrossRef]
  26. T. Hori, T. Shibata, V. Kittichungchit, H. Moritou, J. Sakai, H. Kubo, A. Fujii, and M. Ozaki, “MoO3 buffer layer effect on photovoltaic properties of interpenetrating heterojunction type organic solar cells,” Thin Solid Films 518, 522–525 (2009). [CrossRef]
  27. W. T. Chiang, S. H. Su, Y. F. Lin, and M. Yokoyama, “Increasing the fill factor and power conversion efficiency of polymer photovoltaic cell using V2O5/CuPc as a buffer layer,” Jpn. J. Appl. Phys. 49, 04DK14 (2010). [CrossRef]
  28. A. Luque and S. Hegedus, Photovoltaic Science and Engineering (Wiley Online Library, 2003).

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